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Regrowth-process study of amorphous BF +2 ion-implanted silicon layers through spectroscopic ellipsometry

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Abstract

The recrystallization kinetics of BF +2 ion-implanted silicon has been studied by means of spectroscopic ellipsometry. It has been found that the dielectric constant of the implanted layers depends on the energy, dose and ion-beam current. The activation energy of the regrowth process increases with ion peak concentration becoming saturated for the largest implanted doses. In the largest-dose samples implanted at low current a significant decrease of the regrowth rate was detected when the recrystallization front crosses the peak of the impurity distribution.

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Authors and Affiliations

  1. Laboratorio de Microelectrónica, Departamento de Física Aplicada and de Ingeniería Informática, Universidad Autónoma de Madrid, Cantoblanco, E-28049, Madrid, Spain

    S. Holgado, J. Martinez, J. Garrido & J. Piqueras

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  1. S. Holgado
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  2. J. Martinez
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  3. J. Garrido
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  4. J. Piqueras
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Holgado, S., Martinez, J., Garrido, J. et al. Regrowth-process study of amorphous BF +2 ion-implanted silicon layers through spectroscopic ellipsometry. Appl. Phys. A 60, 325–332 (1995). https://doi.org/10.1007/BF01538413

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  • DOI: https://doi.org/10.1007/BF01538413

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