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Time-resolved, hot-electron conductivity measurement using an electro-optic sampling technique

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Abstract

A picosecond electro-optical sampling technique has, for the first time, been used for measuring the high-electrical-field instabilities in a semiconductor. Current-voltage-characteristics and the high-field domain nucleation time for n-type In0.53 Ga0.47 As samples have been measured with a time resolution better than 10 ps and compared with existing theoretical calculations.

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Authors and Affiliations

  1. Semiconductor Physics Institute, Lithuanian Academy of Sciences, SU-232000, Vilnius, Lithuania

    V. Balynas, A. Krotkus & A. Stalnionis

  2. A.F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, SU-194021, Leningrad, USSR

    A. T. Gorelionok & N. M. Shmidt

  3. Department of Physics, The Royal Institute of Technology, S-10044, Stockholm, Sweden

    J. A. Tellefsen

Authors
  1. V. Balynas
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  2. A. Krotkus
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  3. A. Stalnionis
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  4. A. T. Gorelionok
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  5. N. M. Shmidt
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  6. J. A. Tellefsen
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Balynas, V., Krotkus, A., Stalnionis, A. et al. Time-resolved, hot-electron conductivity measurement using an electro-optic sampling technique. Appl. Phys. A 51, 357–360 (1990). https://doi.org/10.1007/BF00324321

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  • DOI: https://doi.org/10.1007/BF00324321

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