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Electrical characteristics of laser-annealed silicon diodes

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Abstract

Electrical measurements, performed on As-implanted and laser-annealed silicon diodes, have shown poorI–V characteristics with high values of the recombination current and anomalous C-V characteristics. This behavior is attributed to the existence of defects, created during the ion-implantation process, that can not been annealed by the laser treatment. A best improve in the electrical characteristics is obtained after a post-laser annealing in furnace at 600 °C, however the defects are not completely removed.

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Authors and Affiliations

  1. Laboratorio de Semiconductores, Institute de Fisica de Estado Solido (CSIC-UAM), Cantoblanco, E-28049, Madrid, Spain

    J. Martinez

  2. Centre de Reserches Nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE), F-67037, Strasbourg Cedex, France

    E. Fogarassy, A. Mesli & P. Siffert

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  1. J. Martinez
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  2. E. Fogarassy
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  3. A. Mesli
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  4. P. Siffert
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Martinez, J., Fogarassy, E., Mesli, A. et al. Electrical characteristics of laser-annealed silicon diodes. Appl. Phys. A 42, 273–277 (1987). https://doi.org/10.1007/BF00616562

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