Abstract
Depressions and voids, morphological defects which are frequently encountered in LPE-layers of III–V compounds, are described. Their development is discussed for GaAs LPE layers exhibiting facet growth as well as terrace growth. Experimental conditions for the growth of depression- and void-free layers are specified.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H.J. Tietze, E. Butter: Kristall und Technik8, 1303 (1973)
H.F.Lockwood: Proc. Fifth Biennial Cornell Electrical Engineering Conference (1975) p. 127
D.L. Rode, W.R. Wagner, N.E. Schumacher: Appl. Phys. Lett.30, 75 (1977)
N. Toyoda, M. Mihara, T. Hara: Appl. Phys. Lett.27, 627 (1975)
N.B. Small, R.M. Potemski: J. Crystal Growth37, 163–168 (1977)
T. Kobayashi, Y. Furukawa: Japan J. Appl. Phys.15, 171 (1976)
B.L. Mattes, R.K. Route: J. Crystal Growth27 133 (1974)
J.J. Hsieh: J. Crystal Growth27, 349 (1974)
E. Grobe, H. Salow: Z. Angew. Physik32, 381 (1972)
E. Bauser, M. Frik, K.S. Loechner, L. Schmidt, R. Ulrich: J. Crystal Growth27 148 (1974)
K.Hess: Dissertation, Universität Stuttgart (1976)
D.J. Lawrence, L.F. Eastman: J. Electronic Materials6, 1 (1977) Lit. 12 wird im Text nicht erwähnt
J.W. Cahn, B.W. Hillig, G.W. Sears: Acta Metallurgica,12, 1421 (1964)
P. Bennema, G.H. Gilmer: In:Crystal Growth, Ed. by P. Hartmann (North Holland, Amsterdam 1973)
A.A. Chernow: Sov. Phys. Uspekhi4, 116 (1961) [translated from: Usp. Fiz. Nauk73, 277 (1961)]
E. Bauser, M. Frik, L. Schmidt, K.S. Löchner: Verh. DPG7, 505 (1976), and to be published
A.A. Chernov, Sov. Phys.-Crystallography16, 734 (1972) [translated from: Kristallografiya16, 842 (1971)]
E.Kuphal: Technischer Bericht F14, 65 TBr 11, Deutsche Bundespost (1977)
H. Morkoc, L.F. Eastman: J. Electrochem. Soc.123, 906 (1976)