Abstract
The electrical properties of epitaxial InAs and solid solutions based on it (InGaAsSb, InAsSbP, InAsGa, InAsP) have been investigated. It is shown that intentionally undoped crystals have n-type conductivity, which is determined by shallow donor impurities (E 1=0.002–0.003 eV) and structural defects (E 2=0.02–0.03 eV and E 3=0.09–0.10 eV). It is shown that growth of epitaxial InAs using the neutral solvent Pb and also rare-earth elements makes it possible to reduce the electron density by almost an order of magnitude (to levels as low as 3×1015 cm−3) due to due to a decrease in the density of structural defects.
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Fiz. Tekh. Poluprovodn. 33, 781–788 (July 1999)
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Voronina, T.I., Lagunova, T.S., Moiseev, K.D. et al. Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it. Semiconductors 33, 719–725 (1999). https://doi.org/10.1134/1.1187768
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DOI: https://doi.org/10.1134/1.1187768