Abstract
The influence of Y-ion implantation on the oxidation of β-NiAl single crystals has been investigated using SEM, TEM, and STEM. Y ions having an energy of 70 keV were implanted with a concentration of 5×1016 ions/cm2. The oxidation experiments were performed in air at 1223 K. Y-ion implantation resulted in a 45-nm disordered layer. Oxidation of Y-implanted β-NiAl leads to the formation of a fine-grain layer, consisting of γ-Al2O3 containing Y and a θ-Al2O3 layer. After further oxidation the metastable Al2O3 transformed into α-Al2O3, which started at the metal-oxide interface. Y-Al-garnet (YAG) particles were observed and Y segregation to α-Al2O3 grain boundaries has been detected.
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Schumann, E. The effect of Y-ion implantation on the oxidation of β-NiAl. Oxid Met 43, 157–172 (1995). https://doi.org/10.1007/BF01046752
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DOI: https://doi.org/10.1007/BF01046752