Abstract
The nonlinear optical coefficientd ij(kl) (2ω, 0,ω, ω) for electric field-induced optical second harmonic generation in semiconductors is calculated by means of a perturbation treatment. The result is given directly as a Brillouin zone integral over a resonant energy denominator. A simplified energy band structure model is used to carry out the Brillouin zone integral. The analytic closed-form expression ford ij(kl) (2ω, 0,ω, ω) thus obtained permits the calculation of the absolute value of its spectrum from available energy band parameters. The dispersion ofd 11(11) (2ω, 0,ω, ω) of Ge is numerically calculated, second harmonic photon energies being close to theE 0 andE 1 gaps. The results show pronounced resonant behaviours.
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Kikuchi, K., Tada, K. Theory of electric field-induced optical second harmonic generation in semiconductors. Opt Quant Electron 12, 199–205 (1980). https://doi.org/10.1007/BF00620037
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DOI: https://doi.org/10.1007/BF00620037