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Investigation of the gapless state in bismuth-antimony alloys

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Abstract

The results are presented from an experimental study of the gapless state produced in semiconducting alloysBi 1−x Sb x by pressure-induced band inversion. The magnetoresistance properties of the alloys have been investigated both in weak magnetic fields (μH « 1) and in strong fields (H≤75 kOe) at liquidhelium temperatures in the Sb concentration interval 0.06≤x≤0.15 and pressure interval 1 bar ≤p<20 kbar. At pressuresp close to the pressurep k at which the gapless state is realized a “semiconductor-semimetal-semiconductor” transition is detected inBi 1−x Sb x alloys withx=0.070 and 0.071. The rates of change of the gap ε gL before and after inversion are determined: −(2.5±0.5)×10−6 eV/bar and (1.5±0.5)×10−6 eV/bar, respectively. A reduction in the carrier effective mass as ε gL → 0 is observed down to values of ∼ 10−4 m 0. It is shown that as ε gL → 0 the carrier mobilities in the alloys increase abruptly, the effect being a maximum in the purest alloys, where forT=4.2 K the mobility along the binary axis attains the record-high value of ∼ 3×108 cm2/V · sec.

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Authors and Affiliations

  1. Low Temperature Physics Section, Physics Department, Moscow State University, Moscow, USSR

    N. B. Brandt, Ya. G. Ponomarev & S. M. Chudinov

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  1. N. B. Brandt
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  2. Ya. G. Ponomarev
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  3. S. M. Chudinov
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Brandt, N.B., Ponomarev, Y.G. & Chudinov, S.M. Investigation of the gapless state in bismuth-antimony alloys. J Low Temp Phys 8, 369–420 (1972). https://doi.org/10.1007/BF00653870

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