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Noise associated with reverse anneal phenomenon in high current arsenic-implanted silicon

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Abstract

Reverse anneal phenomenon was observed in high current arsenic-implanted silicon samples and was pronounced with increasing implantation current. Noise measurements were used to study this phenomenon, the noise spectrum was composed of 1/f noise and generation-recombination (g-r) noise. The Hooge parameter α, usually a constant for the 1/f noise in homogeneous samples, was found to be a function of annealing temperature and the measured g-r noise values which may reflect the activation percentage of implanted atoms under different annealing temperatures were in good agreement with theoretical predictions.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan

    D. M. Liou, J. Gong & C. Y. H. Tsai

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  1. D. M. Liou
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  2. J. Gong
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  3. C. Y. H. Tsai
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Liou, D.M., Gong, J. & Tsai, C.Y.H. Noise associated with reverse anneal phenomenon in high current arsenic-implanted silicon. J Mater Sci: Mater Electron 2, 230–235 (1991). https://doi.org/10.1007/BF00702928

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  • DOI: https://doi.org/10.1007/BF00702928

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