Abstract
Studies were made of heat-treated Ni-GaAs contacts, at which, prior to the electrochemical deposition of nickel, thin layers of gallium or arsenic were deposited. The physicochemical reactions at the interfaces were investigated, as well as the electrophysical characteristics of the diodes, the morphology of the metallic coatings, and the mechanical stresses. The phase composition of the contacts and the height of the barrier are seen to be practically independent of the introduction of excess Ga or As, whereas the thermal stability of the electrical parameters of the diodes varies considerably. This difference is associated with the effect of the Ga and As sublayers on the magnitude of the mechanical stresses arising at the metal-semiconductor interface.
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Literature cited
I. D. Romanova, N. K. Maksimova, et al., Poverkhn., Fiz., Khim. Mekh., No. 1, 106 (1984).
I. D. Romanova, N. K. Maksimova, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 4, 151 (1976).
M. Ogawa, Thin Solid Films,70, 181 (1980).
L. G. Kositsyn, V. P. Yanovskii, et al., Poverkhn., Fiz., Khim. Mekh., No. 9, 38 (1982).
V. G. Bozhkov, V. M. Zavodchikov, et al., élektron. Tekh., Ser. 2, Poluprovodn. Prib., No. 7 (126), 41 (1978).
I. D. Romanova, N. K. Maksimova, in: Semiconductor Devices with a Schottky Barrier. Collection of Articles [in Russian], Naukova Dumka, Kiev (1979), p. 182.
V. T. Cherepin and M. A. Vasil'ev, Secondary Ion-Ion Emission of Metals and Alloys [in Russian], Naukova Dumka, Kiev (1975).
A. P. Byatkin, L. G. Kositsyn, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 4, 7 (1981).
Akio Hiraki, Semiconductor Technology, Jpn. Annu. Rev. Electron., Comput., and Telecommun., Tokyo, Amsterdam (1981), p. 36.
C. Barrett and E. J. Massies, J. Vac. Sci. Technol.,B1, No. 3, 819 (1983).
A. P. Vyatkin and N. K. Maksimova, Izv. Vyssh. Uchebn. Zaved., Fiz., No.10, 96 (1983).
N. G. Filonov, N. K. Maksimova, et al., Phys. Status Solidi (a),83, 701 (1984).
V. G. Bozhkov, O. Yu. Malakhovskii, and A. M. Misik, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 3, 97 (1983).
A. E. Vol, The Constitution and Properties of Binary Metallic Systems [in Russian], Vol. 2, Fizmatgiz, Moscow (1969).
M. G. Mil'vidskii and V. B. Osvenskii, Structural Defects in Semiconductor Single Crystals [in Russian], Metallurgiya, Moscow (1984).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 46–51, February, 1987.
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Romanova, I.D., Maksimova, N.K., Potakhova, L.Y. et al. Effect of Ga and As sublayers on the structures and properties of Ni-GaAs contacts. Soviet Physics Journal 30, 131–136 (1987). https://doi.org/10.1007/BF00898151
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DOI: https://doi.org/10.1007/BF00898151