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Pump-pulse induced chirp production in semiconductors

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Abstract

Nonlinear absorption and refractive index changes in wide-gap semiconductors (CdS, CdSSe, and GaSe) after ps light irradiation are determined with an excite-and-probebeam spectrometer. Based on a simple model pump-pulse induced chirp parameters on a signal pulse of different wavelength are calculated. Possible applications are discussed.

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Authors and Affiliations

  1. Department of Physics, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, DDR-6900, Jena, German Democratic Republic

    M. Kaschke, B. Wilhelmi & R. Zimmermann

  2. Zentralinstitut für Elektronenphysik der Akademie der Wissenschaften der DDR, Hausvogteiplatz 5-7, DDR-1086, Berlin, German Democratic Republic

    V. D. Egorov & H. X. Nguyen

Authors
  1. M. Kaschke
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  2. B. Wilhelmi
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  3. V. D. Egorov
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  4. H. X. Nguyen
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  5. R. Zimmermann
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Kaschke, M., Wilhelmi, B., Egorov, V.D. et al. Pump-pulse induced chirp production in semiconductors. Appl. Phys. B 45, 71–75 (1988). https://doi.org/10.1007/BF00694318

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  • DOI: https://doi.org/10.1007/BF00694318

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