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The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys

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Abstract

This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.

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Authors and Affiliations

  1. Messerschmitt-Bölkow-Blohm GmbH, Postfach 801109, D-8000, München 80, Germany

    G. Krötz & G. Müller

  2. Physik Department E16, Technische Universität München, D-8046, Garching, Germany

    J. Wind

Authors
  1. G. Krötz
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  2. J. Wind
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  3. G. Müller
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Krötz, G., Wind, J. & Müller, G. The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys. Appl. Phys. A 49, 165–169 (1989). https://doi.org/10.1007/BF00616295

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  • DOI: https://doi.org/10.1007/BF00616295

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