Abstract
Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low\(p_{{\text{O}}_{\text{2}} } (< 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})\) both TP and EC remain constant with\(p_{{\text{O}}_{\text{2}} } \). In the medium range\((1.6{\text{ }} \times {\text{ 10}}^{\text{2}}< p_{{\text{O}}_{\text{2}} }< 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}\) sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this\(p_{{\text{O}}_{\text{2}} } \) value. In the high\(p_{{\text{O}}_{\text{2}} } \) region (>7.6×103 Pa) TP vs log\(p_{{\text{O}}_{\text{2}} } \) exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this\(p_{{\text{O}}_{\text{2}} } \) value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
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