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Mechanism for nonlinearI-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system

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Abstract

The nonlinearI–V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease inV th with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI–V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.

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Muragi, B.D., Zope, M.J. & Zope, J.K. Mechanism for nonlinearI-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system. Appl. Phys. A 46, 299–303 (1988). https://doi.org/10.1007/BF01141596

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