n
-hexylthiophene), and metals, such as, In, Ag, Al, Sn, etc. The polymers were synthesised chemically using ferric chloride as catalyst. The electrical properties of the devices have been studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Junction parameters such as ideality factor (n) and barrier height (χ) have been calculated on the basis of thermoionic emission theory. Better performance of P3cHT/metal diode, compared to P3nHT was attributed to the steric effects produced by cyclohexyl unit present in the polymer.
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Received: 19 May 2000/Accepted: 23 August 2000
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Saxena, V., Prakash, R. Effect of steric hinderance on junction properties of poly (3-alkylthiophene)s based schottky diodes. Polymer Bulletin 45, 267–274 (2000). https://doi.org/10.1007/s002890070030
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DOI: https://doi.org/10.1007/s002890070030