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Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiOx and SiNxOy layers

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Abstract

The molecular ions O +2 and NO+ are implanted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5×1016 to 3.5×1017 at/cm2. The samples are processed by electron beam rapid thermal annealing at 1100 °C for 15 s. The depth distributions of the implanted specimens (18O) are determined by nuclear reaction analyses using the reaction 18O(p,α)15N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.

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References

  1. Pantelides ST, Lucovsky G (1987) SiO2 and its interfaces. Materials Research Society Symposium Proceedings

  2. Reeson KJ, Hemment PLF, Kilner JA, Chater RJ, Meeksion CD, Marsh C, Booker GR, Davis JR (1986) Vacuum 36:891

    Google Scholar 

  3. Markwitz A, Bachmann M, Baumann H, Krimmel EF, Misaelides P, Bethge K (1992) Nucl Instr Meth B68:218

    Google Scholar 

  4. Battistig G, Amsel G, d'Artemare E (1992) Nucl Instr Meth B66:1

    Google Scholar 

  5. Theodossiu W, Baumann H, Markwitz A, Bethge K (1995) Fresenius J Anal Chem (this issue)

  6. Bethge K, Mader A, Meyer JD (1991) Nucl Instr Meth B56/57:806

  7. Chu WK, Mayer JW, Nicolet MA (1978) Backscattering spectrometry. Academic Press, Orlando

    Google Scholar 

  8. Feldman L, Mayer JW, Picraux ST (1982) Materials analysis by ion channeling. Academic Press, New York

    Google Scholar 

  9. Röseler A (1991) Infrared spectroscopic ellipsometry, Akademie- Verlag, Berlin

    Google Scholar 

  10. Röseler A (1993) Fresenius J Anal Chem 346:358

    Google Scholar 

  11. Azzam RM, Bashara NM (1977) Ellipsometry and polarized light, North-Holland, Amsterdam, New York, Oxford

    Google Scholar 

  12. Markwitz A, Baumann H, Grill W, Heinz B, Röseler A, Krimmel EF, Bethge K (1995) Fresenius J Anal Chem (this issue)

  13. Doolitle LR (1985) Nucl Instr Meth B9:344

    Google Scholar 

  14. Rubloff GW (1987) Materials Research Society Symposium Proceedings 105:11

    Google Scholar 

  15. Markwitz A, Baumann H, Grill W, Knop A, Krimmel EF, Bethge K (1994) Nucl Instr Meth B89:362

    Google Scholar 

  16. Ziegler JF, Biersack JP, Littmark U (1985) The stopping and ranges of ions in solids. Pergamon Press, New York

    Google Scholar 

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Authors and Affiliations

  1. Institut für Kernphysik, J.W. Goethe-Universität, August-Euler-Strasse 6, D-60486, Frankfurt, Germany

    R. W. Michelmann, H. Baumann, A. Markwitz, J. D. Meyer, E. F. Krimmel & K. Bethge

  2. Institut für Spektrochemie und angewandte Spektroskopie, LSMU, Berlin, Germany

    A. Röseler

Authors
  1. R. W. Michelmann
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  2. H. Baumann
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  3. A. Markwitz
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  4. J. D. Meyer
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  5. A. Röseler
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  6. E. F. Krimmel
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  7. K. Bethge
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Michelmann, R.W., Baumann, H., Markwitz, A. et al. Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiOx and SiNxOy layers. Fresenius J Anal Chem 353, 403–407 (1995). https://doi.org/10.1007/BF00322078

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  • DOI: https://doi.org/10.1007/BF00322078

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