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Properties of the electron channel in single GaInAsSb/p-InAs heterostructures

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Abstract

An investigation is carried out on the properties of the electron channel in a broken-gap isotypic type II GaInAsSb/p-InAs heterostructure and their dependence on the doping level of the quaternary solid solution with a donor (Te) and an acceptor (Zn). The Hall mobility decreases (by more than two orders of magnitude) with increasing acceptor concentration. The Shubnikov-de Haas oscillations are observed at low temperatures (T=1.5–20 K) and the electron effective mass is determined (m n=0.026m 0), along with some other parameters of the heterostructure.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    T. I. Voronina, T. S. Lagunov, M. P. Mikhailova, K. D. Moiseev, S. A. Obukhov, A. E. Rozov & Yu. P. Yakovlev

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  1. T. I. Voronina
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  2. T. S. Lagunov
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  3. M. P. Mikhailova
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  4. K. D. Moiseev
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  5. S. A. Obukhov
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  6. A. E. Rozov
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  7. Yu. P. Yakovlev
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Additional information

Pis’ma Zh. Tekh. Fiz. 23, 1–6 (February 26, 1997)

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Voronina, T.I., Lagunov, T.S., Mikhailova, M.P. et al. Properties of the electron channel in single GaInAsSb/p-InAs heterostructures. Tech. Phys. Lett. 23, 128–129 (1997). https://doi.org/10.1134/1.1261586

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  • DOI: https://doi.org/10.1134/1.1261586

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