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A design of CuInS2 single-crystal growth by the travelling-heater method

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Il Nuovo Cimento D

Summary

A theoretical analysis has been carried out to investigate the kinetics involved in the CuInS2 crystal growth by the travelling-heater method. A numerical scheme is developed to compute the temperature gradient at any point inside the system. A numeric estimate of the maximum growth rate was obtained as a suggestion for setting the travelling speed of the heater in the practical experiment.

Riassunto

Si è fatta un'analisi teorica per studiare la cinetica coinvolta nella crescita del cristallo di CuInS2 col metodo del riscaldatore mobile. Si sviluppa uno schema numerico per calcolare il gradiente di temperatura in ogni punto del sistema. Si è ottenuta una stima numerica del valore di massimo accrescimento come suggerimento per stabilire la velocità di spostamento del riscaldatore nell'esperimento pratico.

Резюме

Проводится теоретический анализ кинетики выращивания кристалла CuInS2, используя метод перемещающегося нагревателя. Развивается схема вычисления градиента температуры в любой точке внутри системы. Получается численная оценка максимальной скорости роста для установления скорости перемещения нагревателя в практическом эксперименте.

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Authors and Affiliations

  1. National Tsing Hua University, Hsin-chu, Taiwan, R.o.C.

    H. L. Hwang, Y. L. Yen, K. J. Hsu & D. C. Liu

  2. Industrial Technology Research Institute, Hsin-chu, Taiwan, R.o.C.

    C. Y. Sun

Authors
  1. H. L. Hwang
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  2. Y. L. Yen
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  3. K. J. Hsu
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  4. D. C. Liu
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  5. C. Y. Sun
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Hwang, H.L., Yen, Y.L., Hsu, K.J. et al. A design of CuInS2 single-crystal growth by the travelling-heater method. Il Nuovo Cimento D 2, 1762–1766 (1983). https://doi.org/10.1007/BF02457863

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  • DOI: https://doi.org/10.1007/BF02457863

PACS. 81.10

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