Abstract
A mechanism for the nitridation of silicon powder is proposed, based on an interpretation of the microstructure of partially reacted compacts. It is observed that the reaction does not occur at the solid-state interface between the silicon and the nitride product layer. Both silicon and nitrogen are transported through this layer and the removal of silicon results in the formation of pores in the silicon crystals at the nitride-silicon interface. The nitridation reaction takes place within these pores, which subsequently migrate into the silicon grains, and within the original voidage of the compact.
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Atkinson, A., Leatt, P.J., Moulson, A.J. et al. A mechanism for the nitridation of silicon powder compacts. J Mater Sci 9, 981–984 (1974). https://doi.org/10.1007/BF00570392
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DOI: https://doi.org/10.1007/BF00570392