Light-hole exciton spin relaxation in quantum dots

E. Tsitsishvili
Phys. Rev. B 91, 155434 – Published 29 April 2015

Abstract

The phonon-induced flip of the exciton spin in single flat semiconductor quantum dots with a light-hole exciton ground state is studied. The corresponding quartet, split by the exchange interaction, consists of three bright states and a dark state located energetically below the bright exciton. The two in-plane polarized bright states contribute to single-phonon transitions to the dark state and also to the upper bright state polarized in the z growth direction of the dot. For these processes, the presented analytical results are calculated for the relaxation driven by the spin-orbit interaction in the conduction and the light-hole valence subbands. The estimated spin-relaxation times at low temperature are (at least) one order of magnitude lower than the bright exciton lifetime. Two other possible transitions, within the in-plane polarized doublet and between the z-polarized bright and dark states as well, proceed via intermediate states with a contribution from two acoustic phonons. These processes are strongly suppressed at low temperature, whereas they appear to be of the same intensity as single-phonon transitions at high enough temperatures.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 12 February 2015
  • Revised 5 April 2015

DOI:https://doi.org/10.1103/PhysRevB.91.155434

©2015 American Physical Society

Authors & Affiliations

E. Tsitsishvili

  • V. V. Chavchanidze Institute for Cybernetics, Georgian Technical University, S. Euli 5, 0186, Tbilisi, Georgia

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 15 — 15 April 2015

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×