Abstract
The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×1017 As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×1021 cm−3 at 1050° C.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Armigliato, A. Parisini: J. Mat. Res. 6, 1701 (1991)
T. Wadsten: Acta Chem. Scand. 23, 331 (1969)
R. Jede, H. Peters, G. Ganschow, U. Kaiser, K. Seifert: J. Vac. Sci. Technol. A 6, 2271 (1988)
A. Lietoila, J.F. Gibbons, T.W. Sigmon: Appl. Phys. Lett. 36, 9 (1980)
D. Nobili, A. Carabelas, G. Celotti, S. Solmi: J. Electrochem. Soc. 130, 992 (1983)
M. Derdour, D. Nobili, S. Solmi: J. Electrochem. Soc. 138, 858 (1991)
S.M. Hu: In Atomic Diffusion in Semiconductors, ed. by D. Shaw (Plenum, London 1973) p. 217
R.B. Fair, G.R. Weber: J. Appl. Phys. 44, 273 (1973)
M.Y. Tsai, F.F. Morehead, J.E.E. Baglin, A.E. Michel: J. Appl. Phys. 51, 3230 (1980)
E. Guerrero, H. Potzl, R. Tielert, M. Grasserbauer, G. Stingeder: J. Electrochem. Soc. 129, 1286 (1982)
K.C. Pandey, A. Erbil, G.S. Cargill III, R.F. Boehme, D. Vanderbilt: Phys. Rev. Lett. 61, 1282 (1988)
A. Parisini, A. Bourret, A. Armigliato, M. Servidori, S. Solmi, R. Fabbri, J.R. Regnard, J.L. Allain: J. Appl. Phys. 67, 2320 (1990)
P.M. Fahey, P.B. Griffin, J.D. Plummer: Rev. Mod. Phys. 61, 2 (1989)
A. Armigliato, D. Nobili, S. Solmi, A. Bourret, P. Werner: J. Electrochem. Soc. 133, 2560 (1986)
D. Nobili: In Semiconductor Silicon, ed. by H.R. Huff, K.G. Barraclough, Jun-ichi Chikawa (The Electrochemical Soc. Inc., Princeton, NJ 1990) p. 550
A. Armigliato, A. Bourret, S. Frabboni, A. Parisini: Phys. Status Solidi (a) 109, 53 (1988)