ISSN:
1600-5724
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Chemistry and Pharmacology
,
Geosciences
,
Physics
Notes:
In normal Kikuchi patterns a defect line and an excess line pass through the incident spot and a diffracted spot respectively, when the Bragg condition is satisfied. By means of selected area diffraction at 80 kV accelerating voltage, Kikuchi patterns were recorded from various thicknesses of a silicon crystal. Normal contrast was obtained from regions where the thickness was (n + ½)l, where l is the extinction distance and n is an integer, while the contrast was reversed for those regions where the thickness was nl. This result, can be explained by a theory of inelastic scattering; it is contrary to that obtained by Thomas & Bell (Proc. Fourth European Regional Conf. Electron Microscopy, Rome (1968), 283) where normal contrast was obtained for nl and reversed contrast for (n+ ¼)l.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0567739470000839
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