ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Both unipolar and injection SiC devices can be used for high voltage switchingapplications; it is not determined, however, for which applications one approach is preferred overthe other. In this paper, simulation studies are used to compare the suitability of unipolar devices, inthis case a JFET (Junction Field Effect Transistor) against an equivalent FCD (Field ControlledDiode) configuration up to very high voltages. The calculations are performed in a finite elementapproach, with commercial drift-diffusion software. Numerous drift layers have been simulated in aMonte-Carlo approach to ensure that the optimal design of the drift layers for different breakdown isused. In a static case, purely conductive losses in the drift layer in both unipolar and injectionconfiguration are compared. Additionally the total losses are studied and compared in switchedapplications for different switching frequencies and current levels
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.975.pdf
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