ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have proposed a novel model of hydrogen etching of SiC based on thermalequilibrium and have confirmed the validity of our model through the analysis of H2 etchingexperiments. The experimental results obtained showed that the etching rate is expressed by a linearequation with the H2 flow rate, by an exponential function with the reciprocal of the temperatureand by a power law with the pressure. These results agree well with the theoretical behaviorsderived from our model
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.211.pdf
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