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  • 1
    Electronic Resource
    Electronic Resource
    Far-infrared reflection–absorption spectroscopy of thin polyethylene oxide films (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 2746-2751 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the temperature dependent far-infrared spectrum of ultra-thin films of polyethylene oxide (PEO). Using the orientational specificity of infrared and far-infrared reflection–absorption spectroscopy and in-situ recrystallization, we find that during spin coating the PEO helices are initially in the plane of the film, but on crystallization reorient to be normal to the substrate. A splitting of the C–O torsional mode near 109 cm−1 is identified as arising from a distortion of the normal helical structure of PEO. Comparison with transmission spectra of cast films demonstrates the value of far-infrared reflection–absorption spectroscopy (FIRRAS) in the study of crystalline polymers in the far infrared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.467657
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  • 2
    Electronic Resource
    Electronic Resource
    A rotating input polarizer for a double polarization modulation far infrared spectrometer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1861-1862 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report modifications for a recently described double polarization modulation far infrared spectrometer. By changing the input polarizer switching dynamics, we further reduce spectral noise caused by instability of the plasma in the mercury arc source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142384
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  • 3
    Electronic Resource
    Electronic Resource
    A double polarization modulation far-infrared spectrometer (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2113-2120 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new far-infrared spectrometer design is described that utilizes double polarization modulation. Based on the Martin–Puplett interferometer, this new design has high sensitivity in the region between 5 and 200 cm−1 and eliminates problems due to fluctuations in the source, interferometer drift, and reduced dynamic range in studies with small sample absorption. The new spectrometer allows, for the first time, the extension of reflection-absorption spectroscopy of ultrathin films and surface coatings into the far infrared. We present far infrared reflection-absorption data of ultrathin potassium iodide films and submicron thick polyethylene oxide films. Use of the spectrometer for far infrared dichroism studies of thin polymer films and dielectric crystals and polarization-dependent normal incidence reflectance measurements is also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141377
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  • 4
    Electronic Resource
    Electronic Resource
    Tunnel magnetoresistance in magnetic tunnel junctions with ZnS barrier (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6748-6750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A first experimental evidence of a significant tunneling magnetoresistance signal of about 5% at 300 K for a magnetic tunnel junction consisting of hard and soft magnetic layers separated by a 2 nm ZnS semiconducting barrier is reported. The samples have been grown by sputtering on Si(111) substrate at room temperature and have the following structure: Fe6 nmCu30 nmCoFe1.8 nmRu0.8 nmCoFe3 nmZnSxCoFe1 nmFe4 nmCu10 nmRu3 nm. The hard magnetic bottom electrode consists of the artificial antiferromagnetic structure in which the rigidity is ensured by the antiferromagnetic exchange coupling between two FeCo layers through a Ru spacer layer. Barrier impedance scanning microscope (BISM) measurements reveal a good homogeneity of the barrier thickness. Electric transport measurements over square tunnel elements with lateral sizes between 3 and 100 μm, exhibit a typical tunnel current–voltage variations and tunnel resistance of 2–3 kΩ μm2 with small variations which never exceed a factor of 2, which is in good agreement with the BISM results. This good reproducibility of the junctions is very promising for MRAMs and transistors applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359218
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetostatic interactions in artificial ferrimagnet based magnetic tunnel junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6811-6813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetostatic interactions between the soft and the hard magnetic electrodes in magnetic tunnel junctions (MTJs) using artificial ferrimagnets (AFis) are analyzed. We attribute these interactions to the dispersion fields associated to magnetic inhomogeneities arising from domain walls due to local anisotropic ordering. These magnetostatic interactions can be controlled by adjusting the net magnetic moment of the AFi to optimize the magnetotransport response of the MTJ devices.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360678
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  • 6
    Electronic Resource
    Electronic Resource
    Local investigation of thin insulating barriers incorporated in magnetic tunnel junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7371-7373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we study properties of very thin insulating Al oxide films, used as barriers in magnetic tunnel junctions. For the small barrier thicknesses required for technological applications (∼10 Å), the presence of pinholes (direct contact between the ferromagnetic metals through the barrier), or oxidation inhomogeneities, are the major factors for vanishing of the tunnel magnetoresistance effect. We have produced and characterized very thin, pinhole-free Al oxide layers, incorporated in magnetic tunnel junctions. The transport properties of the different barriers were analyzed by barrier impedance scanning microscopy and were correlated with the magnetotransport properties of the patterned microsized junctions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361052
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of the nature of the buffer on the coupling and the transport properties in Co/Ru/Co sandwiches (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1552-1558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of Co30 Å/Ru5 Å/Co30 Å sandwiches has been prepared by ion beam sputtering on a glass substrate using different buffer layers in order to optimize the antiferromagnetic (AF) coupling strength and the giant magnetoresistance (GMR) signal. The best GMR of about 1.7% is obtained for a Co/Ru/Co sandwich deposited on the Fe50 Å/Co5 Å/Cu30 Å buffer. On the basis of the GMR and exchange coupling results, the two more interesting buffers have been chosen for a detailed analysis. Two additional series have been grown with varying Ru spacer layer thickness on these two buffers: 150 Å Ru and Fe50 Å/Co5 Å/Cu30 Å buffer layers. For the two series, oscillations in magnetoresistance and AF indirect exchange coupling have been observed as a function of the Ru thickness with the same period of about 10 Å. The first AF peak is observed at a thickness of 6 Å Ru for the series grown on Ru150 Å buffer and 4 Å for the series grown on a Fe50 Å/Co5 Å/Cu30 Å buffer layer. At this first peak, both GMR and AF coupling are largely enhanced with values JAF=−2.6 erg/cm2 and a GMR of 1.34% for the Fe50 Å/Co5 Å/Cu30 Å buffer compared to JAF=−0.75 erg/cm2 and a GMR of 0.08% for the Ru150 Å buffer. Atomic force microscopy and x-ray diffraction studies have also been performed in order to understand the origin of the observed increase in GMR and AF exchange coupling between the two series. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373854
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum coherent transport versus diode-like effect in semiconductor-free metal/insulator structure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4231-4233 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum coherent transport in double barrier tunnel junctions has been exploited for building micrometric-size semiconductor-free diodes. At room temperature, we observe strongly asymmetric current–voltage characteristics with an asymmetry ratio increasing with the bias voltage, reaching a maximum of 20 at 1 V. Our experimental data can be perfectly explained using a theoretical model involving resonance-assisted tunneling. The coherent/resonant tunneling regime is achieved using metallic 3 nm diameter monodisperse Cu clusters, sandwiched between two Al2O3 barriers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426685
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  • 9
    Electronic Resource
    Electronic Resource
    Enhancement of the thermal stability of magnetic tunnel junctions employing artificial ferrimagnets (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3624-3626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated magnetic tunnel junctions that use Co/Ru/Co and Co/Ru/Co50Fe50 artificial ferrimagnet (AFi) systems as hard magnetic electrodes and AlOx as tunnel barrier. The thermal behavior of the two AFis, incorporated in tunnel junctions, presents dramatic differences, the most remarkable being the much greater thermal stability of the Co/Ru/CoFe system. This stems from the improvement of the interfaces the CoFe alloy forms with its adjacent Ru and AlOx layers. After successive annealing steps up to 400 °C, junctions incorporating the Co/Ru/CoFe system still present a significant tunnel magnetoresistance signal of nearly 20%, and most importantly, an almost intact magnetic rigidity of the hard magnetic system, being very promising for spin-electronic devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328764
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  • 10
    Electronic Resource
    Electronic Resource
    Interfacial phenomena related to the fabrication of thin Al oxide tunnel barriers and their thermal evolution (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3110-3112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we study phenomena related to the plasma oxidation of thin metallic Al layers, to be used as insulating barriers in magnetic tunnel junctions. We investigate by barrier impedance scanning microscopy how the barrier's over oxidation influences the local transport characteristics of the oxide layers and the results are correlated with the magnetotransport properties of patterned microsized as-deposited and annealed junctions. Interestingly, the oxygen reservoir existing at the ferromagnetic metal, degenerating the tunnel device, can be utilized for the improvement of the junction's magnetotransport properties by means of thermal annealing processing. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410361
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