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  • 1
    Electronic Resource
    Electronic Resource
    Tetrahydrocannabinol Homologs with a s-Alkyl Group in the 3-Position. XVI1 (1945)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 67 (1945), S. 1534-1537 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01225a040
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  • 2
    Electronic Resource
    Electronic Resource
    Stability of Mannitol to Lactobacillus plantarum Degradation in Green Beans Fermented with Lactobacillus cellobiosus (1983)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 48 (1983), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Mannitol, in fermented green bean juice, was converted to lactic acid by Lactobacillus plantarum when the initial pH was raised to 3.9. However, at pH 3.5, mannitol was stable to anaerobic degradation by a 106 CFU/ml inoculum of 19 strains of L. plantarum and four isolated homofermentative lactobacilli. Several strains were capable of limited mannitol degradation at an initial pH 3.7. Completely fermented beans were microbiologically stable for at least 6 months under anaerobic conditions at 27°C. It is possible that heterolactic acid-fermented vegetables are microbiologically stable provided fermentable sugars are removed and the pH is lowered below pH 3.7.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1983.tb14943.x
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  • 3
    Electronic Resource
    Electronic Resource
    An amorphous silicon/silicon-carbide double barrier structure with 2.66 peak to valley current ratio negative resistance (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1178-1179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon/silicon-carbide double barrier structure with 2.66 peak to valley ratio single negative resistance and 1.146/1.174 double negative resistance under room temperature are studied. Theoretical analysis and experimental investigation employed to raise peak to valley current ratio and to obtain multiple negative resistances current-voltage curve are also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351798
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  • 4
    Electronic Resource
    Electronic Resource
    Infrared spectroscopy and vibrational relaxation of CHx and CDx stretches on synthetic diamond nanocrystal surfaces (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 11081-11088 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100028a007
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  • 5
    Electronic Resource
    Electronic Resource
    The vibrational dephasing and relaxation of CH and CD stretches on diamond surfaces: An anomaly (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 3975-3983 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The temperature dependence of infrared absorption spectra of CH and CD on diamond nanocrystal surfaces has been investigated. Phase relaxation was closely examined by analyzing frequency shifts and line broadening in the spectra. Based on the model of Persson and Ryberg [Phys. Rev. B 40, 10 273 (1989)], coupling phonons responsible for the pure dephasing process were found to resonate at ω0≈1200 cm−1 for the CH stretch. By including both the phase and energy relaxation in the linewidth analysis and assuming that energy relaxes via three-phonon emission, we estimate a pure dephasing time of T*2≈340 ps at room temperature. This value is one order of magnitude larger than the energy relaxation time, T1≈19 ps, measured by Chin et al. [Europhys. Lett. 30, 399 (1995)] on a C(111) single crystal surface. We interpret the anomalous observation to be the result of the high frequency of the coupling phonons. For the CD stretches, however, severe line broadening due to exceedingly rapid energy relaxation disallows accurate determination of T*2. Since CH and CD stretches have similar thermal and inhomogeneous broadening characteristics, the lifetime of the latter is estimated to be T1≈220 fs. This T1 value is one of the shortest vibrational energy relaxation times for any adsorbate on a dielectric surface. Systematic comparison of these anomalous results with the measurements of SiH stretches on Si(100) and Si(111) is given. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472271
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  • 6
    Electronic Resource
    Electronic Resource
    Traveling wave method for measurement of thermal conductivity of thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4180-4183 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present here the design of a novel and simple setup for measuring the thermal conductivity of thin films. This method is based on the well known principle of phase lag of a traveling thermal wave. In the present setup, the traveling thermal wave is generated in the thin film by irradiating its one edge by an infrared laser. The phase lag (Δθ) between the excitation wave and the resulting thermal wave, at a variable distance d from the edge of the sample, is determined by measuring the deflection of another "probe-laser." The thermal diffusivity is then directly calculated from the slope of the plot between Δθ and d. This method offers an accuracy of better than ±5%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148364
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  • 7
    Electronic Resource
    Electronic Resource
    Spectroscopic studies of nitrogenated amorphous carbon films prepared by ion beam sputtering (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4944-4955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic analysis of the unhydrogenated amorphous carbon nitride (a-CNx) films, prepared by ion beam sputtering, was done by ellipsometry, Raman scattering and x-ray photoelectron spectroscopic (XPS) studies. The optical gap of the films was estimated from the Tauc's analysis of the (n,k) data obtained from spectroscopic ellipsometry. In addition to the commonly observed D and G bands at ∼1350 cm−1 and 1550 cm−1, respectively, we detected a separate band at ∼1450 cm−1 in the Raman spectrum of a-CNx films. This intermediate peak was unambiguously identified as the N band arising out of the nitrogen–nitrogen bonding, due to the incorporation of nitrogen in the a-C network. High resolution XPS C 1s and N 1s peaks were used to estimate the nitrogen content in the films and various bonding configurations were identified from their Gaussian deconvolution. An increase in the intensity ratio of CN and CC components, I(CN)/I(CC), in the C 1s spectra signified increasing nitrogenation of the carbon network. Deconvolution of the N 1s spectra revealed that the sp3-hybridized C(Single Bond)N component remained unchanged at ∼40%, however, the sp1-hybridized C(Triple Bond)N component increased in intensity when the nitrogen content in the network increased systematically. Increasing nitrogenation led to the graphitization of the network and resulted in a gradual decrease in the optical gap, along with simultaneous increase in the ID/IG and IN/IG intensity ratios in the Raman band. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459610
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  • 8
    Electronic Resource
    Electronic Resource
    Gate turn off capability of insulated gate metal/amorphous Si/crystalline Si (p-n) switching device (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gate turn off capability of a trench insulated gate metal/amorphous silicon (a-Si:H)/crystalline silicon (c-Si) (p-n) heterojunction switching device is studied. Using a negative gate voltage to modulate the depletion width in the a-Si:H region, and hence lowering the field for the multiplication of carriers, the heterojunction switching device can be gate turned off or even gate locked. Thus the device can be developed as a gate controllable light switch or light sensor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106192
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation and analysis of the negative resistance characteristic in an amorphous silicon and silicon–carbide single-barrier device (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2815-2817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of negative differential resistance in an amorphous silicon and silicon–carbide single-barrier device have been experimentally observed at room temperature. Based on the calculated and measured results, the barrier thickness is the important factor in determining the current–voltage characteristics of this device. In addition, the effective mass and the series resistance of amorphous materials are larger than that of crystalline materials. Thus the behavior of negative differential resistance of an amorphous silicon single-barrier device would be different from that of single-crystalline devices. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112575
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  • 10
    Electronic Resource
    Electronic Resource
    Novel amorphous silicon doping superlattice device with bidirectional S-shaped negative differential characteristics (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 177-179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel amorphous silicon doping superlattice device with bidirectional S-shaped negative-differential characteristics has been fabricated and investigated experimentally. The occurrence of the S-shaped switching phenomenon is caused by the potential redistribution due to the avalanche multiplication process. The experimental results are demonstrated and the electronic transport theory is proposed in this letter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110391
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