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  • 1
    Electronic Resource
    Electronic Resource
    Vibrational spectra of aniline–Arn van der Waals cations (n=1 and 2) observed by two-color "threshold photoelectron'' [zero kinetic energy (ZEKE)-photoelectron] spectroscopy (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 6399-6406 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Measurements of mass-selected ion-current and threshold photoelectron spectra of jet-cooled aniline–Arn van der Waals complexes (n=1 and 2) have been carried out with a two-color resonantly enhanced multiphoton ionization (REMPI) technique using a high-resolution threshold photoelectron analyzer developed in this laboratory. From our (1+1') REMPI experiments via the respective excited S1 states, we have obtained photoelectron spectra with well-resolved vibrational progressions due to "low-frequency van der Waals modes'' of the cations; νvdW=16 cm−1 (n=1) and νvdW=11 cm−1 (n=2). From Franck–Condon calculations, we have assigned these low-frequency vibrations to the "van der Waals bending'' of the cations. We have also found that the angles of the van der Waals bonds in the cations are changed by 8.2 (n=1) and 8.8 (n=2) degrees with respect to the S1 states. The adiabatic ionization potentials (Ia) of aniline and the aniline–Arn complexes (n=1 and 2) have been determined as 62 268±4 cm−1 (aniline), 62 157±4 cm−1 (n=1), and 62 049±4 cm−1 (n=2). Their shifts ΔIa are 111 cm−1 (n=1) and 219 cm−1 (n=2) with respect to aniline. Spectral shifts due to complex formation have been observed for a total of 13 ring modes of the cations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462634
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  • 2
    Electronic Resource
    Electronic Resource
    Absence of photoelectron spectroscopic evidence for "proton tunneling'' in the cation ground state of jet-cooled tropolone (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 9401-9403 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: From our high resolution REMPI threshold photoelectron measurements of jet-cooled tropolone, it has been found that no spectral doublet showing "proton tunneling'' in the cation ground state (D0) is observed within an experimental accuracy of 2 cm−1. The adiabatic ionization potential was obtained as Ia=68 365±5 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461168
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  • 3
    Electronic Resource
    Electronic Resource
    A study of phenylacetylene and styrene, and their argon complexes PA–Ar and ST–Ar with laser threshold photoelectron spectroscopy (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 8926-8933 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this work, the molecules styrene (ST) and phenylacetylene (PA), as well as their argon complexes ST–Ar and PA–Ar, have been investigated with (1+1') resonance enhanced multiphoton ionization (REMPI) threshold photoelectron spectroscopy (TES). The first adiabatic ionization energies of ST, PA, ST–Ar, and PA–Ar have been measured as 68 267±5, 71 175±5, 68 151±5, and 71 027±5 cm−1, respectively. For both ST–Ar and PA–Ar, the first photoelectron band shows structure in the lowest frequency van der Waals (vdW) bending mode in the ground ionic state, with νvdW being measured as 15 cm−1 in each case. For each molecule excitation to a particular vibrational level of the S1 state followed by ionization, allows structure in that mode to be observed in the threshold photoelectron spectrum. This has been achieved for three modes in both styrene and phenylacetylene. The experimental ionic vibrational frequencies thus obtained, have been compared with those known for the S0 and S1 states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463367
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  • 4
    Electronic Resource
    Electronic Resource
    Cation vibrational spectroscopy of trans and gauche n-propylbenzene rotational isomers. Two-color threshold photoelectron study and ab initio calculations (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 2920-2927 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper, a full account of an earlier report [Takahashi, Okuyama, and Kimura, J. Mol. Struct. 249, 47 (1991)] on the cation vibrational spectra of trans and gauche n-propylbenzene, which were obtained by means of a two-color (1+1') multiphoton ionization threshold photoelectron technique is presented. The trans and gauche cations were separately produced by (1+1') multiphoton ionization resonant through the S1 vibronic levels of n-propylbenzene in supersonic free jets in which both the trans and gauche isomers exist. From the observed threshold photoelectron spectra, adiabatic ionization energies are determined as Ia(trans)=70 278 cm−1 (8.7134 eV) and Ia(gauche)=70 420 cm−1 (8.7311 eV) with an accuracy of ±8 cm−1 (±1 meV). Furthermore, four benzene ring modes (6b+, 1+, 12+, and 18a+) as well as several low-frequency torsional and bending modes have been identified which are sensitive to the relative conformations of the n-propyl group with respect to the benzene ring [(trans)+: 82, 212, and 300 cm−1; (gauche)+: 46, 73, 207, and 252 cm−1]. The present vibrational assignments of the trans and gauche cations are based on a normal mode analysis performed for the trans cation by ab initio calculations. In the present work, this technique is demonstrated to be quite powerful for distinguishing the vibrational spectra of different cation isomers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463033
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  • 5
    Electronic Resource
    Electronic Resource
    Reply to the Comment on: Cation vibrational spectroscopy of trans and gauche n-propylbenzene rotational isomers. Two-color threshold photoelectron study and ab initio calculations (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 5109-5109 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In connection with the Comment by Liu and Zhou [J. Chem. Phys. 98, 0000 (1993)] on our paper [J. Chem. Phys. 97, 2920 (1992)], the following can be pointed out. Although our ab initio calculations with the STO-2G basis set are not sufficient, we have obtained some useful information from symmetry consideration which supports our experimental vibrational assignments of the trans n-propylbenzene cation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464938
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  • 6
    Electronic Resource
    Electronic Resource
    The role of electronic and geometric factors in "proton tunneling:'' A comparative study of tropolone and 9-hydroxyphenalenone by threshold photoelectron spectroscopy (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 56-66 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High resolution two-color threshold photoelectron spectra of tropolone and 9-hydroxyphenalenone (9-HPO) isolated in a free jet expansion have been measured to study the proton tunneling phenomena in the cation ground state (D0). The tunneling splitting widths of the D0 zeroth vibrational level for the both molecules lie within our experimental accuracy (2 cm−1), indicating that the proton tunneling is inhibited when compared to that obtained in their respective neutral states. By means of a comparative study of these two molecules, the tunneling inhibition has been explained in terms of a large contribution from the electronic factor which represents the changes in charge distribution of the π electrons upon ionization. The geometric factor, which is associated with the ring planarity is less important in determining the rate of tunneling in the D0 state. In the case of tropolone, we have found that the measurement of an out-of-plane skeletal vibration in various electronic states make it possible to describe the tunneling path at a higher level than a simple one-dimensional description. Moreover, the adiabatic ionization energies of 9-HPO and the deuterated 9-HPO have been determined accurately to be 65 338±5 cm−1 (8.1009±0.0006 eV) and 65 350±5 cm−1 (8.1024±0.0006 eV), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465783
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous surface segregation of Sb in Si during epitaxial growth (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A delta-function-shaped Sb doping spike in Si is prepared by deposition of Sb on Si(001) followed by low-temperature molecular beam epitaxy of Si. The depth profile of the Sb atoms is measured using high-resolution Rutherford backscattering spectroscopy, yielding a depth resolution of 0.3 nm. The observed profile shows two peaks corresponding to the δ-doped layer (of width 0.5 nm) and Sb atoms on the surface. The latter are due to surface segregation of Sb atoms during the growth of the Si cap layer. The surface segregation rate is derived from the observed results at temperatures 70–280 °C. It is larger than the value extrapolated from high-temperature ((approximately-greater-than)400 °C) data by several orders of magnitude and shows a very weak temperature dependence as compared to the high-temperature data. These features indicate a new surface segregation mechanism at low temperature. A mechanism for this anomalous segregation is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118121
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2413-2415 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Existence of Zn-As and Ga-Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se-reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn- or Ga-interstitials on the GaAs surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116151
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  • 9
    Electronic Resource
    Electronic Resource
    The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 939-941 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc coverage and the structures of Zn-exposed As-stabilized GaAs(001)-(2×4) and -c(4×4) surfaces have been studied using x-ray photoelectron spectroscopy and scanning tunneling microscopy in order to clarify the role of the Zn pre-exposure process in ZnSe growth on GaAs(001). Since Zn atoms stick on the GaAs-(2×4) surface even though their interaction is very weak, Zn may act as a balancer to form a neutral ZnSe/GaAs interface. Zn can also remove excess As atoms and make a "pure" (2×4) structure that is the only possible starting surface for low-defect ZnSe heteroexpitaxy on a GaAs(001) surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122045
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  • 10
    Electronic Resource
    Electronic Resource
    ZnSe epitaxy on a GaAs(110) surface (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1192-1194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe molecular beam epitaxial growth on GaAs(110) substrates has been studied using reflection high-energy electron diffraction (RHEED), atomic force microscopy, and transmission electron microscopy. An atomically flat and low defect homoepitaxial buffer GaAs(110) was grown with high V/III ratio (≥150) and at low growth temperature (∼430 °C). At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, RHEED oscillation was observed and no facet was seen on a pseudomorphic ZnSe(110) surface. Low defect ZnSe films (defect density ≤105 cm−2) were also obtained without the Zn preexposure process necessary for low defect ZnSe(001) growth. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119622
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