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  • 1
    Electronic Resource
    Electronic Resource
    Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 698-700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning capacitance spectroscopy (SCS), a variant of scanning capacitance microscopy (SCM), is presented. By cycling the applied dc bias voltage between the tip and sample on successive scan lines, several points of the high-frequency capacitance–voltage characteristic C(V) of the metal–oxide–semiconductor capacitor formed by the tip and oxidized Si surface are sampled throughout an entire image. By numerically integrating dC/dV, spatially resolved C(V) curves are obtained. Physical interpretation of the C(V) curves is simpler than for a dC/dV image as in a single-voltage SCM image, so that the pn junction may be unambiguously localized inside a narrow and well-defined region. We show SCS data of a transistor in which the pn junction is delineated with a spatial resolution of ±30 nm. This observation is consistent with the conclusion that SCS can delineate the pn junction to a precision comparable to the Si depletion width, in other words, the actual size of the electrical pn junction. A physical model to explain the observed SCS data near the pn junction is presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120849
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  • 2
    Electronic Resource
    Electronic Resource
    pn-junction delineation in Si devices using scanning capacitance spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1485-1495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM). As reported in Edwards et al. [Appl. Phys. Lett. 72, 698 (1998)], scanning capacitance spectroscopy (SCS) is a new data-taking method employing an SCM. SCS produces a two-dimensional map of the electrical pn junctions in a Si device and also provides an estimate of the depletion width. In this article, we report a series of microelectronics applications of SCS in which we image submicron transistors, Si bipolar transistors, and shallow-trench isolation structures. We describe two failure-analysis applications involving submicron transistors and shallow-trench isolation. We show a process-development application in which SCS provides microscopic evidence of the physical origins of the narrow-emitter effect in Si bipolar transistors. We image the depletion width in a Si bipolar transistor to explain an electric field-induced hot-carrier reliability failure. We show two sample geometries that can be used to examine different device properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372039
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  • 3
    Electronic Resource
    Electronic Resource
    Coupled maximum entropy: Monte Carlo Estimation of microwave, millimeter-wave and submillimeter-wave spectrum of velocity fluctuations in GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 238-240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The maximum entropy method is presented in this letter as a highly interesting procedure for the investigation of high frequency noise properties of bulk semiconductors and electron devices at microscopic level. A Monte Carlo simulation of the hot electron velocity fluctuations in bulk GaAs has been performed to illustrate the efficiency and usefulness of this procedure. Comparisons with the most popular techniques presently used in Monte Carlo simulations of noise have also been performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120696
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