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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 846-848 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The short-period (GaAs)n1(AlAs)n2 superlattices with parameters (n1,n2)=(21,25), (6,42), (14,16), and (23,8) have been grown by molecular beam epitaxy on GaAs substrates along the [012] direction and characterized by x-ray and Raman scattering spectroscopy. The appearance of distinct satellite peaks around the Bragg reflections demonstrates the formation of high quality superlattices. The observed TO and LO confined modes have frequencies which map closely those of the optical phonons of bulk GaAs and AlAs in the Γ-W-X direction.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5072-5078 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoluminescence decay time measurements in heavily doped GaAs:C-layers designed as base layers for heterojunction bipolar transistors are reported. These measurements provide access to nonequilibrium minority carrier lifetimes that determine the current gains of those devices. By systematically studying transient luminescence spectra over a wide range of excitation densities between 1013 and 1018 cm−3, we demonstrate the importance of carrier trapping processes at low excitation densities. Optimized excitation conditions that achieve trap saturation but also avoid stimulated emission are found for densities of (1–3)×1017 cm−3/pulse. Detection is limited to a spectral window well above the energy gap (beyond 1.5 eV). Values for both Auger and radiative recombination coefficients are given. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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