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  • 1
    Electronic Resource
    Electronic Resource
    Dual-ion-beam sputter deposition of ZnO films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 244-248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical properties of zinc oxide films deposited by dual-ion-beam sputtering are analyzed to point out the performance of this technique for the deposition of this material. The films are deposited by sputtering a zinc oxide target with an argon-ion beam, while a second low-energy beam, the assistance ion beam, impinges directly on the growing films. Results are presented for ZnO films deposited at room temperature with different oxygen/argon ratios in assistance ion beam and different sputtering ion-beam currents. Elemental, structural, and electrical analyses have been performed on films. All the films show the typical crystallographic orientation, with the c axis perpendicular to the substrate. The oxygen percentage in the assistance ion beam plays an important role in controlling the electrical resistivity of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354152
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  • 2
    Electronic Resource
    Electronic Resource
    The stability of zinc oxide electrodes fabricated by dual ion beam sputtering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1143-1145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of the electrical and optical properties of dual ion beam sputtered zinc oxide films, with resistivities of 10−3 Ω cm, were investigated. ZnO films were deposited at room temperature by argon ion beam sputtering of a zinc oxide target. Argon or hydrogen/argon mixtures of positive ions were irradiated by the second source on the growing film. After heat treatment in air, no significant changes in the electrical and optical properties are observed for films irradiated by hydrogen/argon ions. ZnO films prepared by this method would be useful in the production of transparent and conductive electrodes for practical use at high temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354062
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  • 3
    Electronic Resource
    Electronic Resource
    Secondary-ion-mass spectrometry and near-field studies of Ti:LiNbO3 optical waveguides (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5345-5350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary-ion-mass spectrometry (SIMS) and near-field (NF) methods have been applied to study Ti:LiNbO3 optical waveguides. Ti concentration as a function of diffusion process parameters has been studied by the SIMS method. The main determining factors that were found to affect the depth-diffusion behavior of titanium in LiNbO3 slab waveguides are the initial thickness of the dopant film and the diffusion temperature. Anisotropy in the diffusion rate for Xand has been applied to the refractive index profile reconstruction for single-mode optical channel waveguides. A sharp change in the index at the air–guide interface has been observed, as expected. The dependence of refractive index change on Ti concentration has been found to be nonlinear, such as quadratic, approximately. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359713
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  • 4
    Electronic Resource
    Electronic Resource
    Dual-ion-beam sputter deposition of TiN films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7360-7362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347596
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-beam sputtering deposition of fluoropolymer thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 10-11 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that it is possible to deposit thin films with various CFx composition (1.26≤x≤1.83) by ion-beam sputtering. These materials with "teflon-like'' composition have been deposited at room temperature by Ar ion-beam sputtering of a teflon target; the film chemical composition has been determined by electron spectroscopy for chemical analysis. The fluorine-to-carbon ratio of the films, as well as their crosslinking degree, is shown to depend on the energy of the ions impinging on the target.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109729
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  • 6
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    Theoretical and phenomenological analogies between flash sintering and dielectric breakdown in α-alumina (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-10-15
    Description: α-alumina pre-sintered samples were subjected to flash sintering at 1200 °C under differing electric field strengths. The analysis of the relation between the incubation time and pre-sintering temperature clearly shows that the presence of pores and surfaces within the sample plays a central role in field-assisted sintering behavior of the material. The observed behavior is accounted for by the strong non-linear electrical conductivity shown by porous alumina at high field strength. The observed non-ohmic conductivity can also be related to the “pre-breakdown” behavior previously described by Frenkel. Literature results suggest that the field involved in flash sintering of alumina is comparable with the dielectric strength at high temperature. We can also state that dielectric breakdown and flash sintering in alumina are associated with similar physical phenomena.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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