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  • 1
    Electronic Resource
    Electronic Resource
    Amorphization and recrystallization of 6H-SiC by ion-beam irradiation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2999-3009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization of 6H-SiC with 200 keV Ge+ ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ions at 480 °C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis. Experimental results on amorphous layer thicknesses have been compared with trim calculations in association with the critical energy density model. Density changes during amorphization have been observed by step height measurements. Particular attention has been directed to the crystal quality and a possible polytype transformation during the IBIEC regrowth. The IBIEC process consists of two stages and results in a multilayer structure. In the initial phase an epitaxial growth of 6H-SiC has been obtained. With increasing IBIEC dose the epitaxial growth changes to columnar growth and is stopped by polycrystallization of 3C polytype in the near-surface region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358649
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6907-6913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35〈x〈0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion-beam induced epitaxial crystallization (IBIEC), which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si–Si and C–C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as-implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si–C heteropolar bonds recrystallize. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361514
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  • 3
    Electronic Resource
    Electronic Resource
    Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2978-2984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500 °C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500 °C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline β-SiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358714
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  • 4
    Electronic Resource
    Electronic Resource
    Trans-projected-range gettering of copper in high-energy ion-implanted silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6934-6936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong gettering of Cu atoms beyond the projected ion range RP has been found in single-crystal Si implanted with P+ and As+ ions at MeV energies. We call this phenomenon the "trans-RP effect." The formation of a separate Cu gettering band below RP, as detected by secondary ion mass spectrometry, indicates the presence of a significant amount of defects therein. These defects have not been detected by transmission electron microscopy and we suggest that they are small interstitial clusters. The amount of Cu atoms gettered beyond RP is, particularly for the P implants, much greater than that in the gettering layer at RP, indicating that the gettering ability of the point defects beyond RP is higher than that of the extended defects at RP. A mechanism responsible for their formation and clustering in the trans-RP region is proposed, and an explanation is given of the differences in the results for the P and As implants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311823
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  • 5
    Electronic Resource
    Electronic Resource
    High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5645-5652 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Five different species, namely B, Si, P, Ge, and As, were implanted at MeV energies into (100)-oriented n-type Czohralski Si, in order to form deep gettering layers during the subsequent annealing. Then the samples were contaminated with Cu by implanting the impurity on the backface and performing additional annealing. The resulting Cu depth distributions were measured by secondary ion mass spectrometry. Strong gettering of Cu atoms beyond the projected ion range RP and formation of a well-defined separate Cu gettering band therein is found for P and As implants. We call this phenomenon the "trans-RP effect." It arises from the presence of a significant amount of defects in the regions much deeper than RP. Their gettering ability is higher than that of the extended defects around RP, as the amount of Cu atoms gettered beyond RP is, especially for the P implants, much greater than that in the implanted gettering layer at RP. These deep defects have not been detected by transmission electron microscopy, and we suggest that they are small interstitial clusters. A mechanism responsible for the migration of self-interstitials from RP into the trans-RP region and their clustering therein is proposed. An explanation is given of the possible reasons for the differences in the results for the P+ and As+ implants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316054
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  • 6
    Electronic Resource
    Electronic Resource
    In situ laser reflectometry study of the amorphization of silicon carbide by MeV ion implantation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3090-3097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ laser reflectometry and ex situ Rutherford backscattering spectrometry have been used to investigate the ion fluence and temperature dependence of the amorphization process in silicon carbide induced by 3 MeV I2+ irradiation. A comparative study in silicon showed that damage accumulation in silicon carbide proceeds more gradually in the preliminary stage of amorphization. The amorphization fluence depends weakly on temperature below 300 K but strongly above 300 K. Silicon carbide is amorphized more quickly than silicon at elevated temperatures. At very low temperatures a higher ion fluence for the amorphization of silicon carbide is required in comparison to silicon. Owing to this behavior, different mechanisms of damage growth are assumed to be present in these semiconductors. A critical energy density of 5.6×1024 eV/cm3 for the amorphization of the silicon carbide crystal up to the surface has been found at room temperature. Experimental results are compared with predictions of the models proposed by Carter as well as by Morehead and Crowder. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368508
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  • 7
    Electronic Resource
    Electronic Resource
    Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4184-4187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of C ions with an energy of 195 keV into Si wafers heated up to 800 °C results in an elastic distortion of the Si host lattice and in the formation of crystalline SiC particles or their prestages depending on implantation dose and temperature. Synchrotron x-ray diffraction at the Rossendorf beamline in Grenoble was used to reveal phase formation and the correlated lattice strain changes. Only a Si lattice deformation without growth of SiC was observed if the fluence did not exceed 5×1015 C ions/ cm2. After implantation of C ions up to 4×1017 cm−2 at a temperature of 500 °C, agglomerations of Si–C and an altered state of Si lattice deformation are found. By implantation of 4×1017 ions/cm2 at 800 °C, particles of the 3C–SiC (β-SiC) phase grow, which are aligned with the Si matrix. They are aligned in such a way with the Si matrix that the cubic crystallographic axes of matrix and particles coincide with an accuracy of 3°. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371344
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  • 8
    Electronic Resource
    Electronic Resource
    Complete recrystallization of amorphous silicon carbide layers by ion irradiation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1999-2001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam-induced recrystallization of amorphous surface layers on single-crystalline silicon carbide substrates (6H–SiC) has been investigated at temperatures of 500 and 1050 °C by cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry and channeling. It is shown, that ion irradiation substantially reduces the onset temperature of both the epitaxial layer regrowth and the random nucleation of crystalline grains. Two recrystallization regimes have been found. At 500 °C ion-beam-induced random nucleation (IBIRN) of crystalline grains strongly competes with ion-beam-induced epitaxial crystallization (IBIEC) and polycrystalline material stops the epitaxial regrowth front in an early stage. At a temperature of 1050 °C IBIEC dominates over IBIRN and a complete, but disturbed epitaxial regrowth is obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114766
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetics of ion-beam-induced interfacial amorphization in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5360-5373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reviews modeling and experimental results of ion-beam-induced interfacial amorphization (IBIIA) in silicon. It is shown that this process differs from the well-known bulk amorphization with regard to the critical energy density approach and the evolution of the roughness of the amorphous/crystalline interface during ion irradiation. IBIIA depends on the substrate temperature, ion flux, and nuclear energy deposition at the amorphous/crystalline interface, which is discussed in detail. Within this scope, new results about the temperature and ion flux dependence of IBIIA are presented that cannot be explained by previous models. Therefore, a new model based on ballistic transport effects that allows one to understand experimental results at low temperatures is proposed. According to this concept IBIIA is controlled by three processes interacting at the amorphous/crystalline interface: an athermal ion-beam-induced defect generation, a thermally activated recombination of defects, and an athermal transport of defects towards the amorphous/crystalline interface as a result of ballistic processes. It is speculated that these defects are mainly interstitials and vacancies involved in those processes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366458
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  • 10
    Electronic Resource
    Electronic Resource
    Reply to "Comment on ‘Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon' " [Appl. Phys. Lett. 77, 151 (2000)] (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 153-153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126907
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