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  • 1
    Electronic Resource
    Electronic Resource
    Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 915-919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes some recent developments in GaAs thin-film solar cells fabricated on Si substrates by metalorganic chemical vapor deposition and numerically analyzes them.GaAs solar cells with efficiency of more than 18% are successfully fabricated on Si substrates by reducing the dislocation density. Photovoltaic properties of GaAs/Si cells are analyzed by considering the effect of nonuniform dislocation distribution on recombination properties of GaAs thin films on Si substrates. Numerical analysis shows that the effect of majority-carrier trapping must be considered. High efficiency GaAs solar cells with total-area efficiency of over 20% on Si substrates can be realized if dislocation density can be reduced to less than 5×105 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343520
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  • 2
    Electronic Resource
    Electronic Resource
    Thin-film wafer fusion for buried-heterostructure InP-based lasers fabricated on a GaAs substrate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2857-2866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results on thin-film wafer fusion of InP/GaAs to fabricate InP-based lasers on a GaAs substrate. We have studied the load pressure dependence of the photoluminescence intensity (PL) of the InP-based layers and electrical properties at the fused interface. Although a higher load pressure results in better electrical contact, it can degrade the PL intensity of InP-based quantum-wells structure fused to a GaAs substrate due to the generation of recombination centers. Buried-heterostructure InP-based lasers are consequently fabricated on a GaAs substrate by thin film wafer fusion, and these lasers are demonstrated to have good performance under continuous-wave operation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372269
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  • 3
    Electronic Resource
    Electronic Resource
    Efficiency calculations of thin-film GaAs solar cells on Si substrates (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3601-3606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 106 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335737
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of substrate temperature on GaAs tunneling diodes grown by molecular beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1238-1240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication discusses the effects of substrate temperatures on tunneling peak current densities both during and after growth of GaAs tunneling junctions. Molecular beam epitaxy (MBE) is the method used in this process. It also shows how thermal degradation is dependent upon doping concentrations. This degradation occurs because of high-temperature overgrowth in GaAs tunneling diodes grown by the MBE method. This communication also suggests some possible ways to minimize the thermal degradation of tunneling junctions, in order to obtain high conversion efficiency in multiple-junction solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339991
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  • 5
    Electronic Resource
    Electronic Resource
    Numerical analysis for radiation-resistant GaAs heteroface solar cell structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 537-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies and numerical analyses are carried out to optimize A1GaAs-GaAs heteroface solar cell structures. Carrier removal rate and damage constant for diffusion length in n-GaAs due to 1-MeV electron irradiation are found to be larger than those in p-GaAs. These results are explained by taking into account deep-level traps associated with radiation-induced defects. Numerical analysis shows that n++-n+-p heteroface cell structure is relatively radiation resistant in a shallow junction solar cell (below 0.2 μm) with a substrate carrier concentration above 3×1015cm−3. In the p++-p+-n heteroface solar cell, optimum junction depth and substrate carrier concentration are 0.2–0.3 μm and 2–5×1015 cm−3, while those in the n++-n+-p heteroface solar cell are less than 0.1 μm and 3–10×1015 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334788
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of oxygen on the properties of AlGaAs solar cells grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2853-2856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of oxygen, which is unintentionally incorporated into AlGaAs films during epitaxial growth, on AlGaAs solar cell characteristics is investigated using molecular-beam epitaxy. It is found that oxygen concentration strongly influences minority-carrier diffusion length and that solar cell efficiency greatly decreases as oxygen concentration increases. A model to describe the effect of oxygen on solar cell characteristics is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340938
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  • 7
    Electronic Resource
    Electronic Resource
    Al0.2Ga0.8As p+-n junction solar cells grown by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2780-2782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.2Ga0.8As p+-n junction solar cells were fabricated by molecular beam epitaxy (MBE) and the relationship between cell properties and growth conditions was examined. It was found that growth temperature strongly influenced the minority carrier diffusion length in cell layers. At a growth temperature of 700 °C, minority carrier diffusion length was much improved and a high conversion efficiency of 12.9% (1 sun AM1.5, for an active area) was obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335871
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  • 8
    Electronic Resource
    Electronic Resource
    High-efficiency Al0.3Ga0.7As solar cells grown by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1075-1077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the growth of high-efficiency Al0.3Ga0.7As solar cells by molecular beam epitaxy. As the growth temperature increases from 650 to 750 °C, the concentration of midgap electron traps in the active layers decreases from 4×1015 to less than 3×1013 cm−3 and the hole diffusion length in the layers improves from 2.0 to 2.6 μm. For cells grown at 750 °C, an efficiency of 14.6% (AM1.5, 100 mW/cm2 for an active area) is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98744
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  • 9
    Electronic Resource
    Electronic Resource
    20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1998-2000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and the characteristics of Al0.4Ga0.6As/GaAs tandem solar cells. The annealing characteristics of GaAs tunnel diodes are studied. It is found that the degradation of the tunnel peak current density by the annealing is suppressed for the diodes composed of a GaAs tunnel junction sandwiched between AlGaAs layers. The tunnel junction is applied to the interconnect between the Al0.4Ga0.6As top cell and the GaAs bottom cell for the tandem solar cell. The cell has a short-circuit current density of 13.8 mA/cm2, an open-circuit voltage of 2.10 V, a fill factor of 70.0%, and a conversion efficiency of 20.2% at 1 sun, AM1.5. This efficiency is the highest ever reported at 1 sun for tandem solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98272
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  • 10
    Electronic Resource
    Electronic Resource
    Photonic memory switch consisting of multiple quantum well reflection modulator and heterojunction phototransistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1547-1549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a photonic memory operation of an exciton absorptive reflection switch, consisting of a multiple quantum well modulator, a distributed Bragg reflector (DBR), and a heterojunction phototransistor (HPT). For the memory function, some of the bias light incident on the modulator passes through the DBR to illuminate the HPT. The state of the device is maintained after removing the input light incident on the phototransistor and is reset by removing the bias light incident on the modulator. Waveform reshaping and retiming of the disordered input pulse is also demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107246
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