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  • American Institute of Physics (AIP)  (27)
  • 1995-1999  (21)
  • 1985-1989  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Line broadening, line shifting, and line coupling effects on N2–H2O stimulated Raman spectra (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5916-5925 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In order to understand the influence of H2O on the stimulated Raman Q-branch spectra of nitrogen in combusting media, an exhaustive theoretical and experimental study has been carried out. Starting from a semiclassical model, particularly convenient at high temperature, the Q-line broadening and shifting coefficients have been calculated over a wide temperature range and for a large number of lines. Stimulated Raman Spectra (SRS) measurements have allowed us to test these calculated line broadening coefficients and thus establish the high accuracy of semiclassical values. The theoretical broadening coefficients have been inverted to deduce state-to-state rotational relaxation rates by using two types of fitting laws. A partial test of the resulting Q-branch profiles has been realized at moderate pressures leading to a discrimination between these two laws. Furthermore, the effect of rotational energy transfers on collisionally narrowed profiles at higher densities has been simulated and compared with the pure N2 case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457461
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements and calculations of CO2 room-temperature high-pressure spectra in the 4.3 μm region (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2944-2950 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Measurements of the absorption by pure CO2 in the 4.3 μm region are presented. They refer to the temperature of 291 K and densities in the 1–80 amagat range. Calculations based on the addition of Lorentzian contributions strongly overestimate the absorption since they do not account for line overlapping. The energy corrected sudden approximation (ECSA) is used to model line mixing within the impact approximation. The scaling parameters of this model are deduced from line-broadening data. This calculation strongly underestimates the absorption in the spectral region near the edges of the vibrational band, whereas it overestimates the absorption in the far wings of the lines. This is attributed to the impact approximation which does not account for the frequency dependence of the relaxation operator. This dependence is roughly determined from our results; it is in good qualitative agreement with the few corresponding available results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455894
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4300-4308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 °C CdTe/MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 °C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c12/c11 is otherwise inferred through this study for zincblende MnTe (1.12). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368648
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal conductivity of thin metallic films measured by photothermal profile analysis (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1510-1513 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Thermal conductivity of nickel and gold films on quartz (thickness 0.4–8 μm) was measured by a modulated thermoreflectance technique recording the surface temperature profile. Model calculations predict an optimum frequency for measuring thermal transport within the film. Measurements on films with various thicknesses reveal a thermal conductivity close to the bulk value for nickel while gold films exhibit a reduced conductivity with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147638
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of CdTe and MnTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3035-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method for directly determining the CdTe atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring the reflection high-energy electron diffraction (RHEED) sublimation intensity oscillations of an ALE grown CdTe layer deposited on a MgTe buffer layer. The ALE CdTe autoregulated growth rate at 0.5 monolayer/cycle (in the substrate temperature domain between 260 and 290 °C) is accounted for on the basis of an atomic model which relies on the alternating c(2×2) Cd and (2×1) Te surface reconstructions during the ALE cycle. RHEED studies on MnTe atomic deposition, together with x-ray diffraction and transmission electron microscopy on ALE grown CdTe/MnTe superlattices reveal that all deposited Mn atoms are incorporated so that no autoregulated growth can be achieved. Furthermore, less than one or just one monolayer of Mn must be sent on the surface per ALE cycle to obtain well controlled superlattices with abrupt interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361243
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal wave imaging of electrically heated microstructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2013-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoreflectance technique is applied for imaging electric current distributions and thermal transfer in a temperature reference resistor heated by an alternating current. High-frequency scans (30 kHz) allow imaging of the current density distribution in conducting strips of the resistor while scans of amplitude and phase of the surface temperature variation at lower frequencies reveal plane, cylindrical, and spherical thermal waves. We investigate wave dimensionality as a function of heating geometry and thermal length, and present a simple method allowing a quantitative thermal analysis by exploiting the phase profile of cylindrical thermal waves. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363094
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  • 7
    Electronic Resource
    Electronic Resource
    CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6257-6265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363714
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal wave propagation in thin films on substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5266-5269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple dispersion equation for surface thermal waves propagating along a solid surface covered with a thin film of higher thermal conductivity is presented. It is shown to describe well phase measurements with a photothermal microscope carried out on metal films on glass substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359702
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  • 9
    Electronic Resource
    Electronic Resource
    Measuring local thermal conductivity in polycrystalline diamond with a high resolution photothermal microscope (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2966-2972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photothermal microscope that provides micrometer lateral and submicrometer depth resolution was designed. Thermal conductivity measurements with modulation frequencies up to 12 MHz on single grains in polycrystalline diamond demonstrate its lateral resolution power even for a highly conducting material. Measured conductivities strongly depend on the averaged volume and values up to 2200 W/mK are found in the high frequency limit where the properties inside a grain are sampled. The capability of the instrument to measure thermal parameters on thin films is demonstrated for gold films evaporated on quartz with a thickness ranging from 20 to 1500 nm. Measurements reveal a strong thickness dependence for both thin film conductivity and the contact resistance between film and substrate. Thermal conductivity decreases monotonically from 230 to 30 W/mK whereas the contact resistance rises from 2×10−7 to 8×10−6 m2K/W with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364329
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative interfacial profiles in CdTe/Mn(Mg)Te heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 756-764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured by high resolution transmission electron microscopy (HRTEM) the width of interfaces in two II–VI heterostructures: CdTe/MnTe and CdTe/MgTe, as a function of the growth mode. A critical review of the different parameters involved in the direct determination of the chemical profile by HRTEM enables us to precisely determine the sensitivity and accuracy of the methods on these particular materials. The measured interface width is of the order of 2.5–3 monolayers (ML) and is compatible with an exchange mechanism involving the monolayer being grown and the last deposited monolayer. Several growth procedures were compared: conventional molecular beam epitaxy and atomic layer epitaxy (ALE). In the case of saturated and oversaturated ALE the inverse MnTe/CdTe interface is no longer planar. A destabilization of the growth front occurs when one or more Mn monolayers per cycle are deposited, through the formation of MnTe islands. Thermal interdiffusion seems to be negligible in the case of Mn. The present HRTEM values for the interface widths extend the results obtained by magneto-optical measurements to higher concentration values and confirm the exchange mechanism. The higher value obtained by x-ray reflectivity (4.7 ML) is explained by the large difference of the average volume on which the measurement is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368134
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