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  • 1990-1994  (238)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5179-5184 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability and crystallization of amorphous Si:P alloy thin films consisting of 20–44 at. % P have been studied in this work. The results show that the alloys have crystallization temperatures ranging from 850 to 1150 °C, which are all higher than that of pure amorphous Si, and that the variation of resistivity of the alloys during the 120 h aging at 300 °C is small (0.6%). These results indicate that the alloys have a high thermal stability, which is in agreement with the thermodynamic prediction we have made. It has also been observed that the crystallization products for these alloys are different. A new silicon phosphide phase has been observed in the 30 at. % alloy sample and suggested to be possibly a hexagonal Si7P3 phase which has lattice parameters a=5.32 A(ring) and c=13.3 A(ring). The alloy films were deposited onto quartz substrates and Si wafers by coevaporation of Si and P. X-ray diffractometry and transmission electron microscopy were utilized to investigate the crystallization temperature and product of the amorphous alloys.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7541-7544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical solution of the light-induced decay of the photorefractive gratings from the charge transport equations with shallow and deep traps is presented. It is predicted that the light-induced decay curve is biexponential, and a superposition of the shallow- and deep-trap decays in the special case is suggested. The prediction is verified in the light-induced photorefractive grating erasure experiments. The erasing intensity dependence of photoconductivity of the BaTiO3 sample is also presented. © 1994 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 7875-7889 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Transient, collision-induced changes in polarizability Δα on the subpicosecond time scale affect Rayleigh and rototranslational Raman scattering by diatomic molecules in dense gases and liquids, induced birefringence, impulsive stimulated scattering, and dielectric and refractivity virial coefficients. For pairs of D∞h molecules, this work gives the long-range contributions to Δα complete through order R−6 in the intermolecular separation R, including the first- and second-order dipole–induced-dipole (DID) interactions, higher-multipole induction, effects of the nonuniformity in the local field, hyperpolarization, and dispersion. We have used spherical tensor methods to cast Δα into the symmetry-adapted form needed for spectroscopic line shape analysis.The polarization mechanisms included here give rise to isotropic rototranslational Raman scattering and to simultaneous rotational transitions on two interacting molecules; both are collision-induced phenomena. Transitions with ΔJ up to ±4 are produced by the R−5 and R−6 polarization mechanisms treated in this work (and the isotropic part of the pair potential). For the pairs H2...H2, H2...N2, and N2...N2, we have used ab initio results for permanent multipoles and susceptibilities to evaluate the classical induction contributions to Δα. For the dispersion contributions, we have derived exact results in the form of integrals of the polarizability and γ hyperpolarizability over imaginary frequencies, and we have approximated these numerically in terms of the static α and γ values, together with van der Waals energy coefficients. For the pairs and configurations studied, the first-order DID terms give the dominant contributions to Δα; the agreement between these terms and the full long-range results tends to be better for the anisotropic collision-induced polarizability ΔαM2 than for the isotropic part Δα00, particularly for T-shaped pairs.The relative contributions to Δα from the other polarization mechanisms reach as high as 29% for second-order DID terms, 27% for E-tensor terms (higher-multipole induction and local field nonuniformity), 21% for dispersion, and 8% for hyperpolarization effects, for R values ∼0.5–1.0 a.u. outside the isotropic van der Waals minimum.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3724-3728 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a differential retarding potential (DRP) method for improving the kinetic energy resolution of a reactant ion beam for scattering experiments. This method allows ion-molecule reaction absolute total cross-section measurements to be performed down to thermal energies using the simple electrostatic aperture ion lenses of a tandem quadrupole mass spectrometric ion-molecule reaction apparatus, even though the reactant ions are formed originally with a broad kinetic energy distribution. To illustrate the principle of the DRP method, examples are given for its application to reactant ion beams prepared in an electron impact ion source and in an ion-molecule reaction ion source. © 1994 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 514-519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co-deposited amorphous TiSi2 thin films with various Sb concentrations were prepared in order to study the effects of Sb on TiSi2 phase transformations. The crystallization behavior of the films was investigated by in situ annealing in a transmission electron microscope. The phase transformation from C49 TiSi2 to C54 TiSi2 in the films was examined with x-ray diffraction. It was observed that incorporation of Sb resulted in a higher crystallization temperature of the amorphous TiSi2 film and a lower crystal growth rate. The activation energies for the crystal growth during the crystallization were determined to be 1.37, 1.62, 1.63, and 1.87 eV (±0.07 eV) for the films with 0, 0.3, 1.3, and 2.5 at. % Sb, respectively. For the C49→C54 transformation, it was, however, observed that the activation energy decreased when the Sb content increased. These indicate that the Sb incorporation in TiSi2 retards the crystallization of the amorphous TiSi2 film, but enhances the transformation from C49 TiSi2 to C54 TiSi2.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4535-4541 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study has been made on reactions in codeposited and multilayer films consisting of silicon and titanium deposited by electron beam evaporation. Transmission electron microscopy and Auger electron spectroscopy were used to determine structures and compositions. The experimental results from the codeposited films in the whole composition range (0%–100%) were compared with the predictions from the calculated free-energy diagram of the Si-Ti system. It is revealed that the phenomena of metal-induced crystallization of amorphous silicon and formation of amorphous alloys appear in two different composition ranges in the binary system. Metal-induced crystallization of amorphous silicon is attributed to lowering of bonding energy of SiSi bonds by titanium atoms in the Si-rich composition range and the formation of an amorphous Si-Ti alloy is attributed to the dominant SiTi bonding due to the largely negative heat of mixing between the two elements in a medium composition range.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monomolecular layers of exfoliated MoS2 are incorporated in the process of the formation of Co ferrite from aqueous solutions. The presence of MoS2 is found to limit the coalescence of particles during reduction to Fe(Co) metal. That MoS2 inhibits the full conversion to metal is confirmed by Mössbauer effect spectroscopy. Magnetization measurements are interpreted on the basis of noncollinear magnetization patterns resulting from competing surface anisotropies.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4227-4231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature profile inside a superconducting target in laser ablation is calculated for laser pulses of various shapes. The calculation is based on the equation of heat conduction. All parameters characterizing the target material are assumed to be temperature dependent and are determined empirically by extrapolating experimental data to the melting point. The receding velocity of the vapor-solid interface is determined by the dynamical balance of energy. Our calculation shows that, in general, there exist subsurface overheating spots at different instants as long as the laser pulse intensity is strong enough. The dependence of their occurrence on the pulse shape is analyzed, and conditions to avoid them without jeopardizing the deposition process are discussed.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 507-513 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si:Sb alloy thin films with various Sb concentrations were deposited on preoxidized Si substrates in an electron-beam evaporation system. The optical properties and the crystallization of the amorphous alloy as a function of Sb concentration were investigated with spectroscopic ellipsometry and x-ray diffraction (XRD), respectively. It has been found that the optical energy band gap decreases from 1.6 to 0.35 eV with increasing Sb concentration from 0 to 50 at. %, and that the index of refraction decreases overall with the increase of Sb concentration. From the crystallization study, it is seen that the crystallization temperature of the alloy decreases with increasing Sb concentration. From a detailed XRD examination, three different crystallization products from the amorphous alloys have been observed in low, medium, and high Sb concentration regions. The structure of the amorphous alloys and the correlation between the optical properties and the structures of the amorphous alloys are discussed. It is suggested that the amorphous alloys have differing favorable bonding structures, depending on the Sb concentration, that correspond to the bonding structures of the crystallization products.
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