Publication Date:
2017-05-23
Description:
Author(s): G. ten Haaf, T. C. H. de Raadt, G. P. Offermans, J. F. M. van Rens, P. H. A. Mutsaers, E. J. D. Vredenbregt, and S. H. W. Wouters Photoionizing a beam of ultracold atoms can provide a high-brightness ion beam, to improve resolution in focused-ion-beam nanofabrication. With this aim, the authors use laser cooling and compression to give a 85 Rb atomic beam an equivalent brightness better than the current standard for the semiconductor industry. This could represent an important step toward smaller feature sizes in integrated circuits. [Phys. Rev. Applied 7, 054013] Published Mon May 22, 2017
Electronic ISSN:
2331-7019
Topics:
Physics
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