Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 3629-3630
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using time-resolved photoluminescence, we examined the carrier-recombination process in strained AlGaInP/GaInP double heterostructures grown by metal-organic vapor phase epitaxy. We found that interfacial recombination dominates the process at room temperature, and that the interfacial recombination is enhanced by tensile strain and reduced by compressive strain.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111226
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