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  • 1
    Electronic Resource
    Electronic Resource
    Room-temperature ferroelectricity in strained SrTiO 3 (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 430 (2004), S. 758-761 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (Tc) is traditionally accomplished by chemical substitution—as in ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02773
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  • 2
    Electronic Resource
    Electronic Resource
    Alternative dielectrics to silicon dioxide for memory and logic devices (2000)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 406 (2000), S. 1032-1038 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Over the past 30 years, astounding progress has been made in silicon technology, achieved through continual scaling of semiconductor devices to ever smaller dimensions, resulting directly in a constant increase in the number of components per chip. The reduction in dimensions has gone ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35023243
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  • 3
    Electronic Resource
    Electronic Resource
    Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1−x)Ti1+yO3+z thin films grown by chemical vapor deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4565-4575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dielectric response of a series of {100} fiber-textured (BaxSr1−x)Ti1+yO3+z samples deposited by liquid-source metalorganic chemical vapor deposition onto Pt/SiO2/Si, as a function of the two most commonly varied microstructural parameters: film thickness and Ti nonstoichiometry y. We find that the overall behavior of these samples is adequately described by mean-field, Landau–Ginzburg–Devonshire theory as for bulk ferroelectrics. However, we quantify the impact of three separable factors for these films that greatly alter the dielectric susceptibility as a function of temperature, compared to that found for bulk ceramic samples at the same Ba/Sr ratio of 70/30: (i) Ti nonstoichiometry; (ii) the apparent interface effect; and (iii) the plane equibiaxial stress state resulting from thermal expansion mismatch strains. When these factors are properly taken into consideration, we show that these fine grained thin films behave in a manner entirely consistent with expectations based on bulk behavior. Implications can therefore be drawn concerning the nature of size effects in this ferroelectric system. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371404
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  • 4
    Electronic Resource
    Electronic Resource
    Composition-control of magnetron-sputter-deposited (BaxSr1−x)Ti1+yO3+z thin films for voltage tunable devices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precise control of composition and microstructure is critical for the production of (BaxSr1−x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125839
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  • 5
    Electronic Resource
    Electronic Resource
    (BaxSr1−x)Ti1+yO3+z interface contamination and its effect on electrical properties (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2593-2595 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface contamination and cleaning processes of (BaxSr1−x)Ti1+yO3+z(BST) and Pt films were investigated using in situ, real-time mass spectroscopy of recoiled ions (MSRI). MSRI analysis revealed that BST film surfaces exposed to atmospheric ambient are contaminated with carbon and hydrogen containing species, which could be removed by thermal decomposition/desorption in an oxygen ambient. Cleaning of the BST surface was accomplished by annealing at 500 °C in ≥1 mTorr O2, resulting in complete elimination of these species. Similar contamination on Pt film surfaces could be eliminated with only 200 °C annealing in 5×10−4 Torr of O2. Annealing of the BST film surface in oxygen prior to deposition of the top Pt electrode results in a clean top Pt/BST interface that yields BST capacitors with much lower and more symmetric leakage current characteristics, and lower dielectric losses compared to BST capacitors with contaminated top Pt electrode/BST interfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318730
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  • 6
    Electronic Resource
    Electronic Resource
    In situ x-ray scattering study of PbTiO3 chemical-vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1809-1811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in situ surface x-ray scattering measurements of PbTiO3 epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth conditions. At lower PbO overpressures, we observe a transition to step-flow growth and an increased rate of recovery after growth, indicating a higher surface mobility. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458530
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3106-3108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-organic chemical vapor deposition was used to prepare Pb(Mg1/3Nb2/3)O3 (PMN) thin films on (001) SrTiO3 and SrRuO3/SrTiO3 substrates, using solid Mg β-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO3 substrate was found, with a (001) rocking curve width of 0.1°, and in-plane rocking-curve width of 0.8°. The root-mean-square surface roughness of a 200-nm-thick film on SrTiO3 was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO3/SrTiO3 were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 μC/cm2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126538
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  • 8
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of layered Dy-Ba-Cu-O compounds (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1660-1662 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial Dy-Ba-Cu-O films have been grown in situ on SrTiO3 substrates using an oxygen plasma beam and elemental source beams in a modified molecular beam epitaxy machine. By periodically shuttering the Dy and Ba beams during growth, flat surfaces of layered Dy-Ba-Cu-O compounds have been obtained. Periodic oscillations in the intensity of the in situ reflection high-energy electron diffraction pattern were observed during shuttered growths. Depending on growth conditions, the as-grown layers have ranged from insulating to superconducting with onset temperatures above 60 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100443
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  • 9
    Electronic Resource
    Electronic Resource
    Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2742-2753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Possible domain patterns are developed for (001) oriented (pseudocubic indexing) epitaxial rhombohedral perovskite ferroelectric (FR) films. We assume that the films are grown above their Curie temperature (TC) in a cubic paraelectric (PC) state. The rhombohedral distortion consists of a "stretch" along one of the four 〈111〉 crystallographic directions of the cubic perovskite unit cell. Domain pattern formation is concurrent with the PC→FR transformation on cooling from the growth temperature. The domain patterns form to minimize elastic energy in the film, at the energetic expense of both forming domain boundaries and developing local stresses in the substrate. Eight possible domains may form, half of which are related by inversion, thus leading to four mechanically distinct variants. The possible domain walls are determined by mechanical and charge compatibility and follow closely from the analysis of Fousek and Janovec [J. Appl. Phys. 40, 135 (1969)]. Domain patterns may develop with either {100} or {101} boundaries. In both cases, the individual domains in the patterns are energetically degenerate and thus equal width lamellar patterns are predicted. When polarization is included in the analysis, the {100} boundary patterns have no normal component of the net polarization, whereas the {101} boundary patterns correspond to the fully poled state. We report on experimental observation of {100} domain patterns in epitaxial PbZr0.80Ti0.20O3 and PbZr0.65Ti0.35O3 films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366632
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  • 10
    Electronic Resource
    Electronic Resource
    The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2497-2504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature- and field-dependent permittivities of fiber-textured Ba0.7Sr0.3TiO3 thin films grown by liquid-source metalorganic chemical vapor deposition were investigated as a function of film thickness. These films display a nonlinear dielectric response under conditions representative of those encountered in dynamic random access memories or other integrated capacitor applications. This behavior has the exact form expected for a classical nonlinear, nonhysteretic dielectric, as described in terms of a power series expansion of the free energy in the polarization as in the Landau–Ginzburg–Devonshire approach. Curie–Weiss-like behavior is exhibited above the bulk Curie point (∼300 K), although the ferroelectric phase transition appears frustrated. Small-signal capacitance measurements of films with different thicknesses (24–160 nm) indicate that only the first term in the power series expansion varies significantly with film thickness or temperature. Possible origins for this thickness dependence are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366062
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