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  • 1
    Electronic Resource
    Electronic Resource
    Depth profile of trapped charges in oxide layer of 6H-SiC metal–oxide–semiconductor structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 282-287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide layers etched at an angle were fabricated on a 6H-SiC substrate by varying etching time in diluted hydrofluoric acid, and 6H-SiC metal–oxide–semiconductor structures with various oxide thicknesses were formed. High-frequency capacitance–voltage measurements were carried out for determining the change in gate voltages corresponding to the midgap condition as a function of the thickness of the oxide layer, and the depth profile of trapped charge density in the oxide was estimated from the result. It is found that negative charges build up near the 6H-SiC/SiO2 interface, and that positive charges accumulate in the region at 40 nm from the interface. No significant difference is observed in the depth profiles of the trapped charge density between the oxide layers on the carbon and silicon faces. The origin of these trapped charges is discussed in conjunction with the carbon-related compounds in the oxide layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362817
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of Sm–Co nanoparticles in a W matrix using multilayered precursors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6397-6401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sm–Co particles have been produced in a W matrix by annealing sputtered Sm–Co/W multilayers with layer thicknesses of 5–28 nm at temperatures of 600–850 °C. The Sm–Co particles had the intermetallic 1:7 and 2:17 structures with sizes below 10 nm and coercivities in the range of 2–10 kOe. A reduction of magnetization with prolonged annealing has been observed and attributed to alloying of Co with both W and Si by interdiffusion through the W layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415369
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  • 3
    Electronic Resource
    Electronic Resource
    High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5731-5733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality InGaN/GaN multiple-quantum wells (MQWs) with different In fractions varying from 0.04 to 0.30 have been grown on Ga-polarity GaN by N2 plasma-assisted molecular-beam epitaxy (rf-MBE). High-resolution x-ray diffraction results have indicated that the high interface quality and good reproducibility of the InGaN QW have been achieved. Photoluminescence spectra reveals the superior and intense luminescence properties of InGaN MQWs from ultraviolet (∼388 nm) to green-yellow (∼528 nm) range. We have shown that the Ga-polarity GaN underneath is the key parameter for the successful growth of InGaN MQWs by rf-MBE. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360705
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties and microstructure of LaCo5-based powders produced by mechanical milling and subsequent annealing (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6147-6153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties of LaCo5-based LaxCo100−x (x=17–22) alloys have been studied in powders synthesized by mechanical milling and subsequent annealing. A record high coercivity (over 1.7 T) with a Mr/Ms ratio about 0.7 (measured at room temperature) has been obtained in La22Co78 powders. Their microstructure consists of major LaCo5 phase grains with the grain size of about 150–350 nm, coexisting with LaCo13 phase particles (30–70 nm) and La/La oxide grains (100–200 nm). The observed magnetic properties originate from the high anisotropy field and uniform grain size and shape of the LaCo5 phase. The demagnetization curve, however, often exhibits a shoulder, which was correlated with the appearance of the magnetically soft 1:13 phase and with the inhomogeneity in the microstructure. All the analyses are consistent with a nucleation-type LaCo5 magnet, where the coercivity is attributed to the difficulty in the formation of reversed magnetic domains. The observed phases and microstructure are briefly discussed based on a possible nonequilibrium phase transition resulting in chemical inhomogeneity and oxidation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467628
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  • 5
    Electronic Resource
    Electronic Resource
    Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1134-1136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of 3C- and 6H-silicon carbide (SiC) was investigated using Raman scattering. It was found that 3C-SiC(111) can be epitaxially grown on 6H-SiC(0001) by chemical vapor deposition, and that Raman spectra are useful for identification of heterostructure of thin layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338157
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1309-1312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was 〈m1;38p〉found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the oxide by 60Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349587
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  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of SiC polytypes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 303-305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of SiC polytypes, 3C- and 6H-SiC, has been studied by chemical vapor deposition. Raman spectra were used to identify the polytypes. 3C-SiC and 6H-SiC were grown on 6H-SiC at low (1330–1500 °C) and high temperatures (1700–1800 °C), respectively. On the other hand, on 3C-SiC, only 3C-SiC was grown at all the temperatures. 3C-SiC epilayers grown at high temperatures have smooth surfaces and good electrical properties compared with those grown at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339147
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  • 8
    Electronic Resource
    Electronic Resource
    Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 254-257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal stress in 3C-silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition was studied using Raman scattering. The stress in the epilayers grown on Si(001) at 1350 °C was found to be 5.4×109 dyn/cm2 tensile, which is comparable to that of silicon on sapphire. The magnitude of the stress is discussed in terms of the elastic deformation theory. It was found that there is not so much difference between the stress in 3C-SiC epilayers grown on Si(001) and that in 3C-SiC on Si(111) as the elastic deformation theory suggests.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339191
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  • 9
    Electronic Resource
    Electronic Resource
    Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1599-1601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence measurements at 5 K were performed to study the optical properties of InGaN/GaN multiple-quantum wells (MQWs) grown by plasma-assisted molecular-beam epitaxy (rf-MBE). Stimulated-emission (SE) phenomena by optical pumping were observed under the high-excitation density from the InGaN/GaN MQW samples with the In composition varying from 0.04 to 0.16. It was found that the threshold density for SE phenomena strongly depended on the In composition, where the lowest threshold density was 69 μJ/cm2 from our samples. Our results show a potential of rf-MBE technique for the future optical device applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402650
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  • 10
    Electronic Resource
    Electronic Resource
    Arsenic mediated reconstructions on cubic (001) GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1025-1027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 4×1 (respectively 1×1) (001) GaN surfaces obtained when molecular-beam-epitaxy (MBE) growth is carried out on (001) cubic SiC were exposed to an As background pressure in the MBE chamber: The reconstructions rapidly and irreversibly changed to 2×2 [respectively c(2×2)] as usually observed for GaN growth on (001) GaAs. The usual reversible 2×2/c(2×2) transitions were consequently observed when bringing the Ga flux up or down. The respective positions for the 4×1/1×1 and 2×2/c(2×2) transitions were worked out as a function of the growth parameters. These observations indicate that the 2×2 and c(2×2) GaN surface reconstructions are mediated by As atoms which we tentatively assign to a surfactant effect. A simple structural model involving As dimers is proposed that accounts for Ga coverages of 0.5 and 1 monolayer for the 2×2 and c(2×2) growth regimes, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118433
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