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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6489-6495 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Real time spectroellipsometry has been applied to determine the deposition rate and thickness evolution of the nondiamond (sp2-bonded) carbon volume fraction in very thin (〈1000 A(ring)), but fully coalesced, nanocrystalline diamond films prepared on Si substrates by microwave plasma-enhanced chemical vapor deposition from gas mixtures of CO and H2. At a substrate temperature of ∼800 °C, high quality diamond films can be obtained over two orders of magnitude in the CO/H2 gas flow ratio, from 0.04, the lowest value explored, to ∼5. A well-defined minimum in the sp2 C volume fraction (0.03 in a 600 A(ring) film) is observed for a CO/H2 ratio of 0.2, corresponding to the C–H–O diamond-growth phase-diagram coordinate XH/Σ=[H]/{[H]+[C]} of 0.9. Under these conditions, the deposition rate increases with increasing temperature over the range of ∼400–800 °C with an activation energy of 8 kcal/mol, behavior identical to that observed for diamond film growth from a CH4/H2 ratio of 0.01. This observation shows that the dominant film precursors in the diamond growth process from CO/H2=0.2 are hydrocarbons whose flux at the growing film surface is controlled through the reaction of excited CO with H or H2 in the plasma. A broad subsidiary minimum in the sp2 C content is observed, centered near a CO/H2 ratio of 2, corresponding to an XH/Σ value of ∼0.5. Under these gas flow conditions, the deposition rate is a complicated function of temperature, exhibiting a peak near 550 °C. This peak shifts to lower temperature with further increases in the CO/H2 ratio above 2, suggesting a nonhydrocarbon precursor and a different growth mechanism for diamond prepared at high CO/H2 ratio and low temperature. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2139-2141 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A barrier height of 1.13±0.03 eV was measured for Al and Au rectifying contacts to p-type chemical-vapor-deposited diamond thin films using the internal photoemission technique. The results are compared with experimental data reported for Schottky barriers on single-crystal diamond.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 3451-3460 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A rotating polarizer multichannel ellipsometer has been optimized for operation well into the ultraviolet (UV) spectral range. With this instrument, 132 spectral points in the ellipsometric parameters (ψ, Δ) over the photon energy range from 1.5 eV (827 nm) to 6.5 eV (191 nm) can be collected in a minimum acquisition time of 24.5 ms, corresponding to one optical cycle of the rotating polarizer. Averages over two and 80 optical cycles (obtained in 49 ms and 1.96 s, respectively) give standard deviations in (ψ, Δ) of less than (0.04°, 0.08°) and (0.007°, 0.015°), respectively, for the energy range from 3.5 to 6.0 eV, as determined from successive measurements of a stable thermally oxidized silicon wafer. Key modifications to previous instrument designs include: (i) a tandem in-line Xe/D2 source configuration for usable spectral output from 1.5 to 6.5 eV; (ii) MgF2 Rochon polarizers for high transmission in the UV without the need for optical activity corrections; (iii) a spectrograph with a grating blazed at 250 nm and two stages of internally mounted order-sorting filters; and (iv) nonuniform grouping of the pixels of the photodiode array detector for a more uniform spectral resolution versus photon energy, with energy spreads per pixel group ranging from 0.02 eV at 1.6 eV to 0.05 eV at 5.1 eV. As an example of the application of this instrument, results of real time spectroscopic ellipsometry studies are reported for the deposition of an amorphous silicon nitride thin film by radio-frequency magnetron sputtering onto a silicon wafer substrate. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5287-5289 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The recently developed technique of real time spectroscopic ellipsometry (SE) has been applied to characterize the nucleation of diamond on c-Si by W filament-assisted chemical vapor deposition, leading to improved control over the process. Specifically, techniques are developed which minimize W contamination at the diamond/substrate interface; calibrations are performed which determine the temperature of the top ∼250 A(ring) of the substrate under growth conditions; and alterations in gas flow conditions are implemented in response to diamond growth for a reduced induction time. With these procedures in place, real time SE provides the induction time, nucleation density, and mass thickness, and is in quantitative agreement with ex situ scanning electron microscopy.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1489-1496 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The deposition of diamond films by microwave plasmas has been studied in gaseous mixtures of methane, hydrogen, and noble gases. Plasma diagnostic results are compared with growth rates and Raman spectra of the films. The noble gases, which influence the degree of excitation or reactant molecules by energy transfer or charge transfer from their excited and ionic states, are active in the deposition process by inducing additional ion-molecule and excited atom-molecule reactions. As a result, enhanced deposition rates have been observed. Small oxygen additions along with the noble gases can suppress the formation of nondiamond carbon phases, leading to an effective way to rapidly deposit diamond films at high methane concentrations while still retaining minimal nondiamond carbon components in the films.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2424-2432 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The role of fluid flow and heat transfer in determining the quality of the diamond films and the rate of their deposition in a hot-filament chemical vapor deposition (HFCVD) reactor was investigated both experimentally and theoretically. The equations of conservation of mass, momentum, and enthalpy were solved numerically to calculate the temperature and fluid flow fields. Experiments were conducted with various flow configurations, and the deposition rates and the spatial variations of film thickness were examined in each case. The films were characterized by Raman spectroscopy, x-ray, and scanning electron microscopy. The influences of free and forced convection, and diffusion due to concentration and temperature gradients (Soret effect) were examined. Comparison of the computed results with the experimental data revealed the importance of thermal diffusion in the HFCVD of diamond.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 437-439 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin diamond films were deposited on different substrates at temperatures below 500 °C by a microwave plasma-enhanced chemical vapor deposition system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The addition of oxygen to the gas mixtures was found to be critical for diamond growth at low temperatures. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transparency. The diamond films were also characterized by scanning electron microscopy.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 586-588 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Schottky diodes were fabricated using gold and aluminum contacts to thin diamond films obtained by a microwave plasma assisted chemical vapor deposition process. The current-voltage and capacitance-voltage-frequency characteristics of these devices are similar to those fabricated on a crystalline diamond base formed by traditional ultrahigh pressure process.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 631-633 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin diamond films were deposited on silicon, MgO, fused silica, and soda lime silica glass at low temperature (the lowest temperature ∼365 °C) by microwave plasma-enhanced chemical vapor deposition. The films were identified as diamond by Raman spectroscopy. A Raman peak shift of several wave numbers to either lower or higher wave numbers due to the strain of the film is also observed. The film deposited on glass is highly transparent. The fine faceted crystals in the film are shown in scanning electron microscope micrographs.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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