ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial filmswith various carrier densities by Raman scattering spectroscopy. Electrical properties such as freecarrier density were examined for the SiC crystals through Raman measurements of the A1LO-phonon plasmon coupled (LOPC) mode and its line shape analysis. The peak frequency and bandwidth of LOPC mode varied with carrier density in the range from 1016 to 1019 cm-3. The line shapeanalysis revealed that the carrier density in the SiC crystals can be simply estimated from measuredfrequency shift of LOPC mode for 4H- and 6H-SiC crystals
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.501.pdf
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