ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In order for SiC-MOSFET to be practical in various power electronics applications, lowspecific on-resistance Ron,sp, high breakdown voltage and “normally-off” characteristics have to befulfilled even at high temperature. We fabricated a SiC-MOSFET employing a submicron gate withchannel length Lg of 0.5μm by a self-aligned implantation and aδ-doped epitaxial channel layer tosuccessfully demonstrate the following features. The normally-off characteristics was confirmedfrom room temperature to 200°C where the therethold voltages Vth were 2.9V at room temperatureand 1.6V at 200°C, respectively. The Ron,sp were 4.6mΩcm2 at room temperature and 9.2mΩcm2 at200°C, respectively, while the breakdown voltage was greater than 1400V
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1115.pdf
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