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  • 1
    Publication Date: 2009-10-29
    Description: Proven Infracambrian hydrocarbon plays occur in various parts of the world, including Oman, the former Soviet Union, India, Pakistan and Australia. Organic-rich strata also occur in NW Africa, and gas shows originating from Infracambrian hydrocarbon source rocks are known from well Abolag-1 in the Mauritanian part of the Taoudenni Basin. The distribution of Infracambrian source rocks in North Africa is patchy and deposition commonly occurred in half-graben and pull-apart basins. In these intra-shelf basins, marine, organic-rich shales and limestones were deposited beneath the turbulent wave zone, away from the coarse siliciclastic Pan-African molasse detritus. On the West African Craton (including the Taoudenni Basin) organic-rich horizons were also deposited earlier, in pre- and syn-Pan-African times between 0.5 and 2 Ga (Ga is 109 years). The long-lasting sedimentation history in this area contrasts with that of the Pan-African regions, such as Oman, which lies in the Pan-African province of the East African Orogen, where preserved sediments are rarely older than 640 Ma. Infracambrian black phyllites in the Anti-Atlas region of Morocco were deposited on a continental slope of a short-lived ocean lying to the north of the West African Craton. Hydrocarbons generated during Infracambrian times from these deposits, however, have a low preservation potential. Infracambrian organic-rich and/or black-pyritic deposits in North Africa are proven in the Taoudenni Basin, the Anti-Atlas and the Ahnet Basin. Thick carbonate successions exist in the Taoudenni Basin, indicating deposition in areas some distance from contaminating coarse siliciclastic hinterland influx. Infracambrian strata may also occur in the Tindouf Basin. However, their deep burial and consequent early maturation history may be unfavourable for the preservation of Infracambrian-sourced hydrocarbons in this area. Local development of Infracambrian source facies may also occur in the Reggane, Ahnet, Mouydir and Iullemeden basins, as indicated by black shales in wells MKRN-1 and MKRS-1 in the Ahnet Basin. Generally, however, these basins appear to be close to the active Pan-African orogenic belt and, consequently, probably received large quantities of coarse siliciclastic sediment, largely of continental facies, which may have diluted any significant hydrocarbon source potential.
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  • 2
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Magnetoencephalograms (MEG) from human brain were measured by means of a 37 channel SQUID magnetometer (KRENIKON). Correlation integrals were calculated from time series exhibiting strong α-rhythm in order to give estimates of correlation dimension andK 2 entropy. The results are discussed regarding the length and the stationarity of the data. It is shown that low spurious correlation dimensions andK 2-entropies may easily be obtained as artefacts due to time correlations in phase space and data length. When time correlations are avoided and the length of time series is taken into account, estimates of correlation dimension andK 2 entropy indicate no evidence of the existence of low dimensionality.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1434-6036
    Keywords: 31.30 G ; 61.70 Y
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Using the111Cd-TDPAC (time differential perturbated angular correlation) method, the pressure dependence of the electric field gradient (EFG) in Sb and Sb1−x M x (M=ln, Zn, Ge, Pb, Cd, Sn) was investigated. The application of a phenomenological ansatz for the parametrisation of the pressure and temperature dependence of the EFG made it possible to combine temperature data gained in former studies [1], [2] with the pressure dependent data presented in this paper. The resulting pressure dependence of −2±0.2 MHz/kbar is shown to be independent of concentration and element of admixture. Results for the volume and explicit temperature dependence agree with existing information on the mixed system Sb1−x M x (M=ln, Zn, Ge, Pb, Cd, Sn); the investigation of the EFG in Sb1−x−y M x Pb y showed that the resulting EFG may be interpreted as the weighted sum of the individual contributions of the two metals.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1572-8145
    Keywords: Sheet metal parts ; computer-aided process planning ; bending tools ; laminated object modelling ; neural networks
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The manufacturing of complex bent parts can be supported effectively by computer-aided planning methods. Software systems are already available for unfolding, laser cutting and bending sequence determination. The paper focuses on methods that support the design of non-standard bending tools and the flexible manufacturing of such tools using laminated object modelling (LOM) technology. The developed system allows for concurrent planning and manufacturing of bending parts and tools. Within the framework of this system, neural networks are applied for automated tool design.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy structure and the carrier relaxation in self-assembled InAs/GaAs quantum dots (SADs) is investigated by photoluminescence excitation spectroscopy (PLE) and photoluminescence (PL) at resonant excitation (below the GaAs and the wetting layer bandgap). In PLE measurements we find a clear resonance from the first excited hole state as well as resonances from a relaxation via different phonons. From a comparison of the PL-rise times in time resolved spectroscopy, we conclude on a fast electron relaxation (≤50 ps) and a slow hole relaxation with a time constant of about 400 ps. Different relaxation paths are observed in the InAs/GaAs quantum dot system and allow us to identify the hole relaxation in the SADs as multiphonon assisted tunneling. The PL-decay time in the SADs after resonant excitation (about 600 ps) is attributed to the lifetime of the quantum dot exciton. In agreement with theoretical predictions, we find a constant lifetime of about 600 ps for temperatures below 50 K and a linear increase of the lifetime between 50 and 100 K with a slope of 26 ps/K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6196-6198 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the linear absorption and the nonlinear absorption due to the bleaching of the excitonic resonance have been used to determine the band-gap reduction and valence-band splitting in spontaneously ordered GaInAs/InP. Tilts of the substrate ranging from 2° to 15° towards {111}B, different growth rates and temperatures have been used to produce a series of samples containing various degrees of ordering. Best sample quality including small x-ray and photoluminescence linewidth as well as low temperature luminescence from the band edge was obtained using a substrate tilted 6° towards {111}B. The ratio between ordering induced band-gap reduction and crystal-field splitting was found to be ζ=1.8±0.4. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 54 (1932), S. 3064-3070 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2127-2129 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spontaneously ordered Ga0.47In0.53As grown on substrates with the (001) surface tilted 4° towards {111}B are studied using spectroscopic methods as well as x-ray diffraction, transmission electron diffraction and dark-field transmission electron microscopy. The single variant ordering is proved by the absence of one class of the ordering induced 〈fraction SHAPE="CASE"〉12{111}B superlattice spots in transmission electron diffraction patterns as well as by the tilted polarization of the photoluminescence emerging from the samples cleaved edge. The temperature dependence of the luminescence peak position shows an anomalous behavior at low temperatures and a strong dependence of the peak position on the excitation power. From low temperature absorption measurements, we find a band gap reduction of 37 meV and a valence band splitting of 13.2 meV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the field screening behavior of quantum-confined Stark effect modulator structures where the GaInAsP/InP heterojunction is in the intrinsic (standard structure) or in the doped regions (modified structure) at working wavelengths of 1.55 and 1.3 μm. The modified structures are obtained by expanding the GaInAsP confinement layers into the p-doped and n-doped regions without changing the total intrinsic layer thickness. The effectiveness of the InP heterobarriers for the holes on the p-side and for the electrons on the n-side is thereby lowered. A significant reduction of field screening for the modified structures is achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 27 (1995), S. 1257-1271 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The fundamentals of the manufacturing process of laser beam cutting are discussed. The equipment necessary for working on two- and three-dimensional applications is described. Criteria for characterizing cutting quality and cutting applications with different laser types are presented. Both modelling of the process and study of process emissions are involved in optimizing the process and system performance, and an overview is given of research results in these areas.
    Type of Medium: Electronic Resource
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