ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Optimizing transmission of beam in an ion implanter used for the manufacture of semiconductor devices leads to improved source lifetime, better reliability, and reduces contamination. With this goal, we are studying the emittance of the beam produced by the ELS-PIG ion source for beams from a BF3 plasma extracted at 90 kV with currents as high as 50 mA. The four-dimensional emittance is measured using a unique pepper-pot emittance gear. We have studied the effect on emittance of the plasma emission aperture dimensions, the extraction gap length, the extracted current and other parameters. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1150426
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