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  • 1
    Digitale Medien
    Digitale Medien
    Determination of Pore Colume of Solid Catalyst (1955)
    s.l. : American Chemical Society
    Analytical chemistry 27 (1955), S. 1963-1965 
    Details
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ac60108a032
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  • 2
    Digitale Medien
    Digitale Medien
    Replacement reactions of hot chlorine atoms in chlorofluoromethanes (1971)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 75 (1971), S. 2685-2687 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j100686a027
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  • 3
    Digitale Medien
    Digitale Medien
    Partial Pressure Isotherms II. (1931)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 35 (1931), S. 3558-3582 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j150330a007
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  • 4
    Digitale Medien
    Digitale Medien
    Useful results for the determination of excited state geometries from resonance Raman spectra: Application to inorganic complexes (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 5734-5745 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The time-dependent formulation of Raman scattering is used to derive simple expressions for fundamental and overtone intensities that depend on potential energy features in the Franck–Condon region and the homogeneous damping constant due to the bath modes. From the Raman excitation profiles, the dependence of the full width at half-maximum on the damping constant is calculated. The results are applied to the rich resonance Raman spectra and Raman excitation profiles of transition metal complexes, in particular, Cs3[Re2OCl10] and Cs4[W2OCl10], to determine the magnitude of the geometric changes occurring upon excitation of the molecule from the ground to the excited electronic state. For each compound, the multidimensional harmonic potential surface and damping constant derived for the excited electronic state are then used to simulate the observed Raman excitation profiles and resonance Raman spectrum.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.462672
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  • 5
    Digitale Medien
    Digitale Medien
    Spectral moment method versus least-squares Franck–Condon analysis for vibrationally resolved absorption spectra (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 5313-5323 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: An accurate, back-of-the-envelope spectral moment method is described to obtain molecular parameters of excited state molecules and ions from vibrationally resolved absorption spectra. Since it is not an iterative procedure, the spectral moment method is clearly much faster than the least-squares Franck–Condon analysis for obtaining molecular parameters, and the procedure described here can even be implemented on a hand-held calculator. Some of the drawbacks of Franck–Condon analysis are overcome by the spectral moment method. Comparison of molecular parameters for a diverse range of excited state molecules and ions obtained by the spectral moment method versus Franck–Condon analysis or rotational spectroscopy reveal the high accuracy of the procedure here. Simulations of vibrationally resolved absorption spectra show that the spectral moment method with the Morse potential approximation gives an envelope that matches very well the observed spectra.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.460516
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  • 6
    Digitale Medien
    Digitale Medien
    Soliton transformations for axially symmetric higher-dimensional gravity. I. Generalized Neugebauer–Kramer transformations (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 893-900 
    Details
    ISSN: 1089-7658
    Quelle: AIP Digital Archive
    Thema: Mathematik , Physik
    Notizen: The field equations for axially symmetric gravitational fields in 4+K dimensions with K-dimensional toroidal compatification can be reduced to those of a generalized nonlinear sigma model. The dual symmetry of this model is considered first. Then the soliton transformations for these equations are derived using the method of Belinskii and Zakharov consequently generalizing their results to the higher-dimensional case. From the result of one-soliton transformation, a series of discrete symmetries generalizing the Neugebauer–Kramer transformation in the four-dimensional case are obtained. The basic properties of these new transformations are studied.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.527579
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  • 7
    Digitale Medien
    Digitale Medien
    Soliton transformations for axially symmetric higher-dimensional gravity. II. Belinskii–Zakharov N-soliton transformations (1987)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 901-904 
    Details
    ISSN: 1089-7658
    Quelle: AIP Digital Archive
    Thema: Mathematik , Physik
    Notizen: The solutions of vacuum Einstein equations in 4+K dimensions with 2+K commuting Killing vectors under the Abelian Kaluza–Klein ansatz are considered. This system admits Belinskii–Zakharov-type soliton transformations. The explicit formulas for general N-soliton transformations are obtained by iterating the formulas for one-soliton transformation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.527580
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  • 8
    Digitale Medien
    Digitale Medien
    Nanoscale limited area growth of InAs islands on GaAs(001) by molecular beam epitaxy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3282-3288 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth of InAs islands on a GaAs(001) substrate patterned with ∼50–200-nm diameter holes in an SiO2 mask overlayer providing selective GaAs nucleation areas is reported. The nanoscale pattern was generated in the SiO2 film by large-area interferometric lithography and dry etching. Two-dimensional, 285-nm period, arrays of InAs islands having heights of 10–15 nm with three different bottom diameters of 50–100, ∼150, and ∼200 nm were selectively grown on SiO2 patterned substrates by molecular beam epitaxy. Growth conditions were chosen to provide a very-low sticking coefficient of In atoms on the SiO2 surface suppressing volume contribution from migration of In atoms incident on the SiO2 mask region to nearby open GaAs surface areas. Formation of spherical-section InAs dots with diameters of about 50 nm relying on nanoscale-limited area growth is demonstrated. As the diameter of the hole increases beyond 150 nm, InAs islands deviate from a spherical section and self-assembled quantum dots confined within the open GaAs surface appear. A relation between dot formation and the nanoscale growth area is proposed, with a transition from single- to multiple-dot formation occurring at hole diameters of ∼100–150 nm. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1436303
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  • 9
    Digitale Medien
    Digitale Medien
    Fertilizer Technology, Calcium Superphosphate Manufacture by Low Acidulation--Quick Conversion Process (1960)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 8 (1960), S. 315-318 
    Details
    ISSN: 1520-5118
    Quelle: ACS Legacy Archives
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jf60110a017
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  • 10
    Digitale Medien
    Digitale Medien
    Photoluminescence study of highly mismatched In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1040-1042 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence measurement is used to study the properties of In0.53Ga0.47As epilayers grown on InP-coated GaAs substrates. Several structures are designed to test the qualities of the epilayers. It is shown that device-quality In0.53Ga0.47As on a GaAs substrate can be achieved. The effects of hydrogenation using a photochemical-vapor-deposition system are studied, and an enhancement of the band-edge luminescence intensity by a factor of 4 is observed. The resulting intensity even exceeds that of the film grown directly on a lattice-matched InP substrate. In addition, the emission coming from lattice defects is greatly reduced after hydrogenation. These results not only further support the potential application of using binary buffer layer concepts in large lattice-mismatched systems, but also demonstrate that the photochemical-vapor-deposition system is a useful tool for injecting hydrogen into InGaAs epilayers. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358962
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