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  • 11
    Electronic Resource
    Electronic Resource
    New syntheses of tetrathiafulvalene (1979)
    s.l. : American Chemical Society
    The @journal of organic chemistry 44 (1979), S. 1728-1729 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01324a038
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  • 12
    Electronic Resource
    Electronic Resource
    Interfacial solid-phase reactions, crystallographic structures, and electrical characteristics of Hf/(001)Si systems (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6703-6709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial solid-phase reactions, crystallographic structures, and electrical properties of Hf/(001)Si systems have been investigated as a function of annealing temperature. For Hf/n+-Si systems, extremely low contact resistivities of 7.3×10−8 and 5.8×10−8 Ω cm2 have been achieved at annealing temperatures of 460 and 580 °C, respectively. A bilayer structure of an epitaxial Hf3Si2 and an amorphous layer is formed at the interface by annealing at 460 °C, and an epitaxially-grown Hf3Si2 layer covers the interfacial layer at 580 °C. The current flowing through the interface of Hf/n-Si is dominated by the thermionic emission for these annealing conditions. The Schottky barrier heights, whose values are 0.50 and 0.46 eV at 460 and 580 °C, respectively, are lower than those of HfSi and HfSi2. It has been found that the decrease in contact resistivity of the Hf/Si systems is mainly caused by the lowering of the Schottky barrier height and an improvement of interfacial defects by annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355092
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  • 13
    Electronic Resource
    Electronic Resource
    Relationship between growth processes and strain relaxation in Si1−xGex films grown on (100)Si-(2×1) surfaces by gas source molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2288-2293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between growth processes and strain relaxation has been investigated on Si1−xGex (0≤x≤1) films grown on (100)Si-(2×1) surfaces by gas source molecular beam epitaxy using Si2H6 and GeH4. It has been found that the critical film thicknesses for the formation of an (8×2) superstructure, {811}-faceted islands, and {311}-faceted islands in the growth process have been found to obey power laws of xn with exponents (n) of approximately −2, −3, and −3 in the range of 0.25≤x≤1.0, respectively. This result indicates that the relaxation of the film strain energy brings about a change into faceted structures and occurs at two steps of {811} and {311} faceting with the film growth. It has been also clarified that the incorporation ratio of Si and Ge atoms into the films is determined by the rate constant ratio of the dissociative adsorption of the hydride compounds, the value of which is six for the Si2H6/GeH4 system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353134
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  • 14
    Electronic Resource
    Electronic Resource
    Charge trapping and interface state generation in metal-oxide-semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6903-6907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical phenomena in metal-oxide-semiconductor capacitors caused by Fowler–Nordheim tunneling injection of electrons have been studied at temperatures ranging from 77 to 300 K. It has been found that the shift of flatband voltages (ΔVFB) depends on the oxidation temperature and that low-temperature oxidation is desirable for the reduction of ΔVFB . The dependence of ΔVFB on the injection temperature shows a characteristic feature: The ΔVFB reduces with decreasing injection temperature in the range above 180 K and, on the other hand, is almost independent of the injection temperature in the range below 180 K. These results are mainly attributable to the injection temperature dependence of interface state generation. The injection temperature dependence of interface state density clearly indicates that two generation mechanisms of interface states are present. In addition, we have found a power-law dependence of the generated interface states on ΔVFB, independent of oxidation and injection conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345082
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  • 15
    Electronic Resource
    Electronic Resource
    Effects of oxidation conditions on electrical properties of SiC-SiO2 interfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6304-6308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of metal-oxide-semiconductor (MOS) devices fabricated on 3C-SiC single crystalline films on (100)Si substrates have been examined by capacitance-voltage method and deep level transient spectroscopy. The electrical properties such as carrier concentration, interface states, fixed oxide charge and deep traps are strongly related to the oxidation ambient and temperature. It has been found that the interface state density of the order of 1010 cm−2 eV−1 can be achieved by wet oxidation at 1000 °C. The influence of preferential oxidation of antiphase grain boundaries is considerable on the carrier concentration and the interface state density in the case of wet oxidation. From a practical point of view, the wet oxidation is concluded to be superior to the dry oxidation because of the lower densities of fixed oxide charge, interface states, and deep traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346873
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  • 16
    Electronic Resource
    Electronic Resource
    Anisotropy of piezoresistance in n-channel inversion layers of metal-oxide-semiconductor transistors on (001)Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5687-5691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic orientation dependence of piezoresistance of n-channel inversion layers in metal-oxide-semiconductor field-effect transistors on p-type (001)Si has been studied by using a diaphragm at room temperature. The experimental results have been compared with self-consistent calculations based on a surface quantization effect. The main feature of the crystallographic orientation dependence can be explained by an electron repopulation effect induced by applied strain and an effective mass anisotropy. It can be found that the difference between longitudinal and transverse piezoresistance in the devices nearly along the [110] directions is mainly due to an orthorhombic distortion of Si, and the shear deformation coefficients Xiu is determined to be 5.8 eV from comparing the experimental results with the calculated ones. An expression of the shear piezoresistance component π44 is also derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346984
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  • 17
    Electronic Resource
    Electronic Resource
    Mechanisms of silicon oxidation at low temperatures by microwave-excited O2 gas and O2-N2 mixed gas (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2603-2607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms are discussed on the enhancement of silicon oxidation at low temperatures by microwave excitation of O2 gas and on the further increase by that of O2 -N2 mixed gas. The activation energy of parabolic rate constants for the oxidation by excited pure O2 gas is 1.15 eV. This value, being almost the same as that in thermal oxidation, indicates that the oxidizing species is O2 molecules. The enhancement of oxidation is interpreted as a consequence of an increase in the O2 adsorption energy on SiO2 surfaces. For the oxidation by O2 -N2 mixed gas, on the other hand, there exist two parallel oxidation processes: one with the excited O2 gas and the other with excited N2 gas. The activation energy for the latter oxidation process is 0.49 eV, which indicates that the oxidizing species is O atoms. We also observed an abnormally high oxidation rate in the range of small O2 /N2 ratios.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345465
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  • 18
    Electronic Resource
    Electronic Resource
    Solid-phase reactions and crystallographic structures in Zr/Si systems (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7050-7056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-phase reactions and crystallographic structures in the interfacial region of Zr/(100)Si systems, which is closely related to the specific contact resistivity, have been investigated by x-ray diffraction, Auger electron spectroscopy and cross-sectional high-resolution transmission electron microscopy. As-grown Zr films are in an amorphous phase including crystallites. The Zr film on silicon annealed at a temperature of 420 °C for 30 min has a bilayer structure. The upper layer is a crystalline α-Zr layer with a (0001) fibrous structure and the lower layer is an amorphous zirconium silicide layer. The formation of the amorphous silicide layer is considered to result from the diffusion of Si atoms from the substrate into the Zr film and to play a major role in a low contact resistivity of 4×10−8 Ω cm2 achieved in this system. By annealing above 560 °C, which brings about an increase in contact resistivity, the crystalline Zr layer with the fibrous structure is changed to an amorphous silicide throughout the film and, subsequently, ZrSi2 regions with a (010) preferred orientation is formed at the interface between the amorphous interlayer and the single-crystal Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347644
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  • 19
    Electronic Resource
    Electronic Resource
    Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4 source molecular beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2164-2167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth process in the initial stage of growth of Ge films on (811)Si substrate surfaces by GeH4 source molecular-beam epitaxy has been studied by in situ reflection high-energy electron diffraction observation. It has been found that a strained film by the monolayer overgrowth mode is formed initially with an epitaxial relationship of the parallel orientation, and that plate-shaped Ge islands with (811) facets are grown early in the growth, but that the predominant facet changes to {311} and the (100) planes with further growth. These growth processes are similar to those of Ge films on (100)Si surfaces reported previously. It is concluded that Ge islands with {811} facets are energetically stable in the initial stage of the island growth on the (811)Si surfaces as well as on the (100)Si surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346573
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  • 20
    Electronic Resource
    Electronic Resource
    Solid phase reaction and electrical properties in Zr/Si system (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific contact resistivity and the Schottky barrier height in the Zr/Si system have been measured as a function of annealing temperature. The specific contact resistivity decreases with increasing annealing temperature and a minimum value of 4×10−8 Ω cm2 is obtained after annealing at 420 °C in a vacuum, which is about two orders of magnitude lower than that of the Al (1.5% Si)/n+-Si system. The formation of ZrSi2 is observed at annealing temperatures above 350 °C, which can be considered to be related to the lowering of contact resistance. The Schottky barrier heights of as-grown Zr films are 0.61 eV for p-type Si and 0.52 eV for n-type Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103505
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