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  • 11
    Electronic Resource
    Electronic Resource
    Fabrication of quantum semiconductor structures by high energy electron beam lithography of an inorganic epitaxial resist on GaAs
    Amsterdam : Elsevier
    Superlattices and Microstructures 15 (1994), S. 81 
    Details
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/spmi.1994.1016
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  • 12
    Electronic Resource
    Electronic Resource
    A new human pathology with visceral accumulation of long-chain n-alkanes; tissue distribution of the stored compounds and pathophysiological hypotheses
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 958 (1988), S. 477-483 
    Details
    ISSN: 0005-2760
    Keywords: Alkanes ; Intracellular storage ; Paraffin ; Plant wax
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2760(88)90234-2
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  • 13
    Electronic Resource
    Electronic Resource
    Behaviour of phospholipase modified-HDL towards cultured hepatocytes. II. Increased cell cholesterol storage and bile acid synthesis
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 1081 (1991), S. 211-219 
    Details
    ISSN: 0005-2760
    Keywords: (Rat hepatocyte) ; Bile acid ; Cholesterol ; HDL ; Phospholipase
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0005-2760(91)90028-G
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  • 14
    Electronic Resource
    Electronic Resource
    Cross-sectional high-resolution electron microscopy investigation of argon-ion implantation-induced amorphization of silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4415-4423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional high-resolution transmission electron microscopy and related diffraction techniques are applied to the characterization of argon implantation-induced amorphization of silicon at room temperature. Damage calculations have been performed to provide a theoretical support for the cross-sectional transmission electron microscopy observations. It is shown that the amorphous-crystalline interfacial roughness is strongly dependent on ion dose and hence on its depth location. The a-c transition region was found to have sharply defined boundaries and sometimes exhibits defects such as dislocations and stacking-fault nuclei. Combining the experimental measurement of the extension of the a layer for increasing dose, with concepts arising from the "critical damage energy density'' model leads to a value of about 10 eV/atom for the c→a transformation. It is suggested that temperature effects are responsible for the observation that higher damage energy densities are apparently needed to produce a first continuous a layer than to extend this layer to greater depth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341264
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  • 15
    Electronic Resource
    Electronic Resource
    Lateral damage extension during masked ion implantation into GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4303-4307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied both experimentally and theoretically the generation of damage in GaAs due to ion implantation through mask openings of small dimensions. We show that it is possible to master the generation of damage, i.e., the amorphization phenomenon in the direction perpendicular to the ion beam and close to the mask edges. A theoretical model is used to simulate the ion implantation process and damage accumulation through Ti–Au masks. After comparing the shape of the crystalline/amorphous interfaces as revealed by cross-sectional electron microscopy with our simulations, this model is used to predict the evolution of the two-dimensional damage distributions beneath the mask edges as functions of ion beam and implantation mask parameters. Undamaged regions of nanometer dimensions can be preserved even when using masks of reasonable dimensions (100–200 nm). This can be done only by adjusting the ion beam parameters through the accurate simulation of the two-dimensional damage generation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363378
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  • 16
    Electronic Resource
    Electronic Resource
    Fractal analysis of atomic force microscopy pictures of slip lines on a GaAs/GaAlAs heterostructure plastically deformed to obtain quantum wires (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8298-8303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fractal analysis of slip lines on the surface of a plastically deformed GaAs/GaAlAs heterostructure has been performed using atomic force microscopy. The high resolution of atomic force microscopy allowed us to analyze a very large interval of magnifications ranging from 1100 to 1 110 000. The fractal behavior of the slip line pattern was only observed in a decade of magnification. At the highest magnifications (40 000–1 110 000), the less fractal tendency of the slip line pattern confirms that the slipping of dislocations is an efficient method to cut a quantum well into quantum wires with a "natural'' reasonable degree of homogeneity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362540
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  • 17
    Electronic Resource
    Electronic Resource
    Optimized selective mixing of a GaAs/GaAlAs quantum well for the fabrication of quantum wires (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5012-5015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the structure of a GaAs/GaAlAs quantum well, which can promote strong mixing rates upon high-dose implantation, with good recovery of the electronic properties after annealing. This structure is employed to fabricate quantum-well wires by Ga+ masked implantation. Low-temperature photoluminescence measurements reveal large lateral modulations of the effective band gap ((approximately-greater-than)178 meV), and small lateral interdiffusion lengths (10 nm). A simple calculation shows that one-dimensional quantization energies between 11 and 20 meV can be expected in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350601
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  • 18
    Electronic Resource
    Electronic Resource
    Mixing of GaAs/(Ga,Al)As interfaces by Ga+ implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1433-1443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing of GaAs/(Ga,Al)As heterointerfaces by Ga+ implantation and annealing has been investigated. The damage accumulation in a GaAs/AlAs superlattice turned out to be less rapid than in a GaAs/GaAlAs quantum-well structure. Low-temperature photoluminescence (PL) spectroscopy of a GaAs/AlAs superlattice could be performed for doses as high as 1 × 1016 ions/cm2. The photoluminescence spectra exhibited several emission bands on the high energy side. The number and energy of these blue shifted peaks were found to depend on the implanted dose and as confirmed by secondary ion mass spectrometry, they could be interpreted as the emission of several quantum wells of the superlattice, disordered with different mixing rates. Two regimes were evidenced; while the depth extension of the disordering has been directly related to the post-implantation defects distribution in the high dose regime, some diffusion of these defects during annealing has been pointed out in the low dose regime. Cross-sectional transmission electron microscopy observations have confirmed the influence of the structure of the implanted sample on damage accumulation. Moreover, the decrease of the PL intensity after annealing could be related to the presence of extended residual defects in the implanted layers. The study of the influence of annealing time at 760 °C, has shown that the photoluminescence intensity can be progressively recovered, while the intermixing saturates rapidly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349554
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  • 19
    Electronic Resource
    Electronic Resource
    Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+ masked implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1444-1450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum wires were fabricated by selective intermixing of a GaAs/GaAlAs quantum well through masked Ga+ implantation and rapid thermal annealing. The evolution of the luminescence spectra of the wires with the width of the implantation masks, enabled us to characterize the lateral selectivity of our process as well as the degree of one-dimensional confinement. The lateral extent of the intermixing was estimated at 20 nm giving rise to an important penetration of aluminum into the wires. From numerical simulations of the spatial distribution of implantation-induced damage, it was concluded that some lateral diffusion of the defects occurred during annealing. However it has been possible to assess the confinement energies to be around 4 meV. The linewidth of the wires' emission turned out to increase with decreasing mask size, indicating the presence of some fluctuations of the confining potential along the wires. The roughness of the lateral definition of the wires was evaluated at 20 nm, of the same order of magnitude as the dimension of the intermixed region under the mask. Under these conditions optical excitation spectroscopy failed to detect the different one-dimensional subbands. Finally the potentialities of this method of fabrication of quantum wires are inspected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349555
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  • 20
    Electronic Resource
    Electronic Resource
    Damage generation and annealing in Ga+ implanted GaAs/(Ga,Al)As quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4833-4842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage generation and its annealing behavior in GaAs/(Ga,Al)As quantum wells after Ga+ implantation at room temperature is investigated by transmission electron microscopy. Its relations with the disordering of the layered structures is explored by low temperature photoluminescence spectroscopy. We find that at low doses the intermixing is activated during annealing through the diffusion of point defects, while at high doses the disordering is produced by cascade mixing. A strong segregation of the defects in the GaAs layers is observed. During implantation of a GaAs/Ga0.65Al0.35As single quantum well, the GaAs quantum-well layer accumulates damage more rapidly than the Ga0.65Al0.35As barriers. At high dose this leads to a differential amorphization of the two compounds. Using the critical damage energy density model, the amorphization thresholds of GaAs and Ga0.65Al0.35As are estimated around 26 eV/molecule and 960 eV/molecule, respectively, in our conditions of implantation. The influence of barriers in AlAs is studied. AlAs is more resistant to amorphization than Ga0.65Al0.35As and delays the amorphization of the GaAs quantum-well layer. This effect is attributed to the in situ recombination of point defects during irradiation in AlAs material as well as to some intermixing of the layers. After annealing it appears that defects can easily diffuse in Al rich materials but are trapped in GaAs. It is concluded that the ability of AlAs to prevent damage accumulation in GaAs quantum wells and to drain off the defects during annealing can be exploited for device applications. The general trends for an optimized GaAs/GaAlAs quantum well dedicated to mixing applications such as the fabrication of quantum-well wires by masked implantation is finally proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350626
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