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Low Frequency Noise of Tantalum Capacitors (2002)

Sikula, J. ; Hlavka, J. ; Pavelka, J. ; [weitere]

Hindawi

In: Active and Passive Electronic Components. 2002; 25(2): 161-167. Published 2002 Jan 01. doi: 10.1080/08827510212341.

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Publikationsdatum: 2002-01-01

Beschreibung: A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model ofTa−Ta2O5−MnO2MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperatureMnO2−Mn2O3transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.

Print ISSN: 0882-7516

Digitale ISSN: 1563-5031

Thema: Elektrotechnik, Elektronik, Nachrichtentechnik

Publiziert von Hindawi

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Stochastic character of partial discharges in insulators (1990)

Macur, J. ; Domanský, K. ; Šikula, J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 540-542

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Partial discharge (PD) measurements have been made under dc applied voltage at atmospheric pressure on polyethylene (PE) and polyvinyl chloride (PVC) foils without intentional defects. An automatic measuring system was used to detect and process PD parameters. Histograms of amplitudes and time intervals between impulses are presented.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.345240

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Excess noise of the silicon surface barrier detectors (1990)

Vojtek, J. ; šikula, J. ; Tykva, R.

Springer

Czechoslovak journal of physics 40 (1990), S. 1289-1292

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ISSN: 1572-9486

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Conclusions From our experiments the following conclusions follow: i) The value of a in the l/f a law lies within the intervala ε (0.6, 1.0). ii) The detectors featuring low reverse currentI c havea ≈ 1.0. iii) The cutoff frequency of the noise characteristicf c is at low frequency compared with the using frequency band of the detector. iv) The excess noise is given by generation-recombination process in the volume of the space — charge region of the sample.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01605058

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