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  • 11
    Electronic Resource
    Electronic Resource
    Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2182-2184 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2/nanometer amorphous Si/SiO2 structures with Si layers of twelve different thicknesses in a range of 0–3.0 nm have been deposited with the two-target alternative magnetron sputtering technique. Electroluminescence (EL) from the Au/SiO2/nanometer amorphous Si/SiO2/p-Si structures has been observed. It is found that the EL peak intensity and peak wavelength synchronously swing with increasing Si layer thickness. The experimental results strongly indicate that the EL originates from luminescence centers in SiO2 layers rather than from the Si layers in the structures. The tunneling of electrons and holes and the quantum confinement effect for them in the nanometer Si layers play important roles in the EL. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123794
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  • 12
    Electronic Resource
    Electronic Resource
    Room-temperature 1.54-μm electroluminescence from the Au/nanometer (SiO2:Er/Si/SiO2:Er)/n+-Si structure (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2496-2498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (SiO2:Er/Si/SiO2:Er) nanometer sandwich structure, in which the thickness of the Si layer between the two SiO2:Er barriers was varied from 1.0 to 4.0 nm with an interval of 0.2 nm, was deposited on both n+-Si and p-Si substrates using the magnetron sputtering technique. Electroluminescence (EL) from the Au/(SiO2:Er/Si/SiO2:Er) nanometer sandwich /n+-Si diodes under reverse biases has been observed. The EL spectrum of each diode can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 μm), 0.806 eV (1.54 μm), and 0.860 eV (1.44 μm), and full widths at half maximum of 0.052 eV, 0.045 eV, and 0.055 eV, respectively. The marked effect of the nanometer Si layer with suitable thickness on enhancing the EL from the Er3+ in the SiO2 layers has been demonstrated. Among the diodes with Si layers having various thicknesses, the intensities of the 1.64-, 1.54-, and 1.44-μm bands of the diode with a 1.6-nm Si layer attain maxima which are 22, 8, and 7 times larger than those of the control diode without any Si layer, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467623
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  • 13
    Electronic Resource
    Electronic Resource
    Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3629-3631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO2) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO2 film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640–680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO2 layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125410
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  • 14
    Electronic Resource
    Electronic Resource
    Rectification properties and interface states of heterojunctions between solid C60 and n-type GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3557-3559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid C60/n-GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117244
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  • 15
    Electronic Resource
    Electronic Resource
    Electroluminescence from Au/Si nitride film/Si with the film prepared by electron cyclotron resonance method (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (∼40 A(ring)) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 A(ring) from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118115
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  • 16
    Electronic Resource
    Electronic Resource
    Two local vibrational modes related to hydrogen in GaN (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5745-5747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed two absorption bands located at around 1730 and 2960 cm−1 in the infrared (IR) absorption spectra from undoped GaN samples which are grown using low pressure metalorganic vapor phase epitaxy and irradiated by gamma ray and then exposed to a radio frequency hydrogen plasma. Proton implantation followed by gamma-ray irradiation of the GaN samples can also activate the IR band at around 1730 cm−1. Based on the experimental results, we tentatively ascribe the 1730 cm−1 band to the local vibrational modes of Ga–H complexes in the vicinity of N vacancies and the 2960 cm−1 band to those of either N–H complexes in the vicinity of Ga vacancies or C–H complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366438
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  • 17
    Electronic Resource
    Electronic Resource
    Photoluminescence of Sm doped porous silicon—evidence for light emission through luminescence centers in SiO2 layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3282-3284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111310
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  • 18
    Electronic Resource
    Electronic Resource
    Gamma-rays irradiation: An effective method for improving light emission stability of porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1830-1832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study on gamma irradiated porous Si. The electron paramagnetic resonance study on porous Si irradiated by gamma rays shows that the observed signals come from an intrinsic defect, a Si dangling bond, at the interface of Si/SiOx in porous Si. The photoluminescence measurements show that the gamma irradiation not only increases the intensity of the photoluminescence but also greatly improves its stability. The spectra of the Fourier transform infrared absorption show that the gamma irradiation is an effective method for accelerating oxidation of porous Si. All experimental results can be explained by the increase of the oxidation layer thickness which decreases the nonradiative recombination probability of electron-hole pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110677
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  • 19
    Electronic Resource
    Electronic Resource
    Negative charge state of hydrogen species in n-type GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 925-927 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Having been exposed to hydrogen plasma, the Te-doped GaAs wafers were deposited with metal Ti, to form the Ti/n-GaAs Schottky barrier diodes (SBDs). The profiles of donor concentration after successive annealing of the hydrogenated SBD at several reverse biases at 100 °C, indicated that the donor concentration in the strong electrical field region of the depletion layer increase monotonically and the donor concentration in the weak electrical field region of the depletion layer decrease monotonically with time. It is confirmed that hydrogen can be present as a negatively charged species in n-type GaAs and thus one can conclude that besides the deep donor level determined previously, hydrogen in GaAs has an acceptor level in the lower half of the energy gap or near the mid gap. There is evidence that the stronger the electrical field in strong field region of depletion layer, the faster the TeH complexes decompose in that region during a reverse bias annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104479
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  • 20
    Electronic Resource
    Electronic Resource
    Effects of hydrogen on Al/p-Si Schottky barrier diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen was incorporated into B-doped p-type crystalline silicon in three different ways: boiling the sample in water, exposing the sample to hydrogen plasma, growing silicon in a hydrogen atmosphere. Al-contact Schottky barrier diodes were made on both the hydrogenated and unhydrogenated samples. It was found that the Schottky barrier height (SBH) is increased due to the hydrogenation. The current-voltage measurement showed an increase of 0.06–0.10 eV in the effective SBH and the activation energy measurement revealed an increase of 0.07–0.09 eV in the SBH under a forward bias of 0.15 V. If the silicon grown in a hydrogen atmosphere was thermal annealed at 650 °C to drive out hydrogen before Schottky metallization, then the SBH approached that of the unhydrogenated sample. It is demonstrated that the SBH in Al/p-Si can be increased with hydrogen incorporated in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102723
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