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  • 11
    Electronic Resource
    Electronic Resource
    Pronethalol-induced Reversal of Adrenergic Vasodepression (1965)
    [s.l.] : Nature Publishing Group
    Nature 208 (1965), S. 1006-1007 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Gate; weighing 2-7 to 3-8 kg and dogs weighing 6-0 to 13-8 kg were anaesthetized with pentobarbitone sodium (30 mg/kg) or chloralose (0-1 g/kg); blood pressure was recorded with mercury manometers, contractions of the nictitating membrane with a frontal writing lever and heart rate with a direct ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/2081006a0
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  • 12
    Electronic Resource
    Electronic Resource
    Molecular marker-assisted selection for development of common bean lines resistant to angular leaf spot (2005)
    Berlin, Germany : Blackwell Verlag GmbH
    Plant breeding 124 (2005), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The objective of this work was to develop homozygous common bean lines carrying angular leaf spot resistance genes derived from the cultivars ‘Mexico 54’, ‘MAR 2’ and ‘BAT 332’ through marker-assisted selection. Molecular markers SCAR OPN02890, RAPD OPE04500 and OPAO12950 linked to the resistance genes of ‘Mexico 54’, ‘MAR 2’ and ‘BAT 332’, respectively, were used in segregating backcross-derived populations to selection. DNA fingerprinting was used to select homozygous BC2F3 and BC1F3 resistant plants genetically closer to the recurrent parent. Two homozygous BC2F2:3 and two and five BC1F2:3 families derived from ‘Ruda’ vs. ‘Mexico 54’ (RM), ‘MAR 2’ (RMA) and ‘BAT 332’ (RB) crosses were selected, respectively. After only one (RMA, RB) or two backcrosses (RM), five and eight BC1F3 lines derived from RMA and RB, respectively, and seven BC2F3 lines derived from RM, with 14.9–16.6, 16.9–18.6 and 9.3–11.1% of relative genetic distances to the recurrent parent were selected. This is the first report of lines resistant to angular leaf spot carrying genes of the cultivars ‘Mexico 54’, ‘MAR 2’ and ‘BAT 332’ developed with the aid of molecular markers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.2005.01155.x
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  • 13
    Electronic Resource
    Electronic Resource
    Identification of a major QTL in cocoa (Theobroma cacao L.) associated with resistance to witches’ broom disease (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 122 (2003), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The witches’ broom disease caused by the fungus Crinipellis perniciosa is the main limiting factor for cocoa production in South America and the Caribbean. In Brazil, this disease affects almost all cocoa-growing regions, causing serious economic, social and ecological damage. The aim of this study was to map genomic regions associated with resistance to C. perniciosa using an F2 population derived from a cross between ‘Scavina-6’(resistant) and ‘ICS-1’(susceptible). The phenotypic index was determined as the average number of vegetative witches’ brooms per canopy area of each plant, the witches’ brooms were counted and eliminated during six field evaluations between May 1998 and August 1999. A total of 124 random amplified polymorphic DNA (RAPD) and 69 amplified fragment length polymorphism (AFLP) markers were mapped along 25 linkage groups covering 1713 cM of cocoa genome. After employing single factor and composite interval mapping analyses, a major quantitative trait loci (QTL) flanked by the marker AV14.940 was identified in the linkage group 11, explaining almost 35% of the resistance to witches’ broom. The present result suggests that this QTL acts as a major dominant component of resistance to this pathogen, with great potential for use in marker-assisted selection procedures in cocoa breeding programmes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0523.2003.00809.x
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  • 14
    Electronic Resource
    Electronic Resource
    Field-enhanced trapping in deep levels by multiple phonon emission in semi-insulating GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6541-6544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 °C under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314899
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  • 15
    Electronic Resource
    Electronic Resource
    Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3764-3769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 °C and the planar-doped layer with a nominal silicon concentration of 3.4×1012 cm−2. The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10−12 s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368588
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  • 16
    Electronic Resource
    Electronic Resource
    Imaging ferromagnetic tracers with an ac biosusceptometer (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2532-2538 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The aim of this work was to study the feasibility of obtaining images of the distribution of ferromagnetic tracers using an ac biosusceptometer (ACB). The images were generated by mapping the response of the ACB at short distances due to the presence of a ferrite powder dispersed in a planar gel matrix with different shapes. The ACB was scanned over the sample and the voltages generated by the variation in ferrite concentration were sampled. Methods to render and image the distribution of ferromagnetic particles were studied. The generalized Wiener parametric method gave the best results. The system has a potential to be used in functional images of the gastrointestinal tract where a moderate resolution is required. We conclude that this biomagnetic method can be successfully used to generate planar functional images of magnetic particles in the near field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150666
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  • 17
    Electronic Resource
    Electronic Resource
    Direct observation of the coexistence of coherent and incoherent InAs self-assembled dots by x-ray scattering (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4342-4344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, grazing incidence x-ray scattering is employed as a method to identify relaxed islands in an ensemble of partially coherent self-assembled InAs quantum dots. A simple model of strained pyramidal islands enables the association of the local lattice parameter of an island to its lateral size. A comparison between the island side length and its strain state allows the identification of coherent and incoherent nanostructures, revealing the size–strain interplay during growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427421
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  • 18
    Electronic Resource
    Electronic Resource
    On three dimensional self-organization and optical properties of InAs quantum-dot multilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3400-3402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on experiments aimed at producing three-dimensional self-organization in InAs quantum-dot multilayers embedded in GaAs. These InAs/GaAs quantum-dot multilayers have been grown by molecular beam epitaxy. Employing atomic force microscopy, we have analyzed the island density in samples with different number of periods of InAs/GaAs bilayers The results reveals a decrease and a tendency to saturation of the island density with an increase in the number of periods, as a three-dimensional self-organization characteristic of these samples. Optical properties of the samples are examined via photoluminescence spectroscopy. The evolution of the quantum-dot photoluminescence peak position indicates an increment in the mean size of the buried islands and a relative homogenization in size of the quantum dots, as the number of periods increases. The results of the optical measurements agree with the morphological data, and characterize a spatial process of self-organization, related to the increment of the number of periods in the multilayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126659
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  • 19
    Electronic Resource
    Electronic Resource
    Electro-optic recovery of the photoquenching effect (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1252-1254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out dynamic low-temperature measurements of the current density for a semi-insulating GaAs sample grown at 300 °C. The standard photoquenching (PQ) effect was observed at low temperatures. We found that high electric fields inhibit the PQ effect and that the recovery of the PQ effect was made possible by simultaneous application of a high electric field and illuminating the sample with infrared light. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124658
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  • 20
    Electronic Resource
    Electronic Resource
    X-ray determination of vertical ordering of InAs quantum dots in InAs/GaAs multilayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1056-1058 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of vertical alignment of InAs quantum dots in InAs/GaAs(001) multilayers was studied using grazing incidence x-ray scattering. We show that it is necessary to access one of the weak (200) x-ray reflections to observe the modulation of the GaAs lattice periodicity produced by the stacking of the InAs dots. The degree of alignment of the dots was assessed by fitting the x-ray diffuse scattering profiles near a GaAs (200) reciprocal lattice point. By using a model of gaussian lateral displacement of the dots, we show that we can determine the average value of the mistake in stacking positions of the islands from one bilayer to the next. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347024
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