ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Native-oxide planar AlxGa1−xAs-GaAs quantum well heterostructure ring laser diodes (25-μm- wide annulus, 250-μm inside diameter, 300-μm outside diameter) are demonstrated. The curved cavities (full-ring, half-ring, and quarter-ring) are defined by native oxidation (H2O vapor+N2 carrier gas, 450 °C) of the entire upper confining layer inside and outside of the annulus. The native oxide provides current confinement and a sufficiently large lateral index step, and thus photon confinement, to support laser oscillation along the ring. Half-ring laser diodes fabricated in a self-aligned geometry exhibit continuous wave (cw) 300-K thresholds as low as ∼105 mA (∼500-μm circular cavity length), high total external differential quantum efficiencies (∼49%), and cw output powers of (approximately-greater-than)40 mW.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107258
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